Internal Oxidation Depth Penetration in Ni-Based Alloys at High Temperatures

CORROSION ◽  
10.5006/2964 ◽  
2018 ◽  
Vol 75 (2) ◽  
pp. 192-202
Author(s):  
Tomasz Dudziak ◽  
Magdalena Ziąbka
Keyword(s):  
High Temperatures ◽  
Internal Oxidation ◽  
Oxidation Depth

Internal Oxidation Prediction by Cellular Automata Approach in Energy Materials at High Temperatures

2019 ◽  
Vol 21 (7) ◽  
pp. 1801142
Author(s):  
Tomasz Pawel Dudziak ◽  
Katrin Jahns ◽  
Dorota Wilk Kołodziejczyk ◽  
Ulrich Krupp ◽  
Adelajda Polkowska ◽  
...  
Keyword(s):  
Cellular Automata ◽  
High Temperatures ◽  
Internal Oxidation ◽  
Energy Materials

A fabrication method for vertical oxide nano-rod array by internal oxidation of alloys at high-temperatures

2012 ◽  
Vol 12 ◽  
pp. S184-S187 ◽  
Author(s):  
Makoto Nanko ◽  
Dung Thi Mai Do ◽  
Takeshi Ishizaki
Keyword(s):  
High Temperatures ◽  
Internal Oxidation ◽  
Fabrication Method ◽  
Rod Array

In situ REM imaging of surface processes on ceramic bulk crystals from 300 to 1670 K in a conventional TEM

1991 ◽  
Vol 49 ◽  
pp. 660-661
Author(s):  
Z. L. Wang ◽  
J. Bentley
Keyword(s):  
High Temperatures ◽  
Image Resolution ◽  
Atomic Processes ◽  
Crystal Surfaces ◽  
Beam Radiation ◽  
Surface Areas ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Gas Reactions

Studying the behavior of surfaces at high temperatures is of great importance for understanding the properties of ceramics and associated surface-gas reactions. Atomic processes occurring on bulk crystal surfaces at high temperatures can be recorded by reflection electron microscopy (REM) in a conventional transmission electron microscope (TEM) with relatively high resolution, because REM is especially sensitive to atomic-height steps.Improved REM image resolution with a FEG: Cleaved surfaces of a-alumina (012) exhibit atomic flatness with steps of height about 5 Å, determined by reference to a screw (or near screw) dislocation with a presumed Burgers vector of b = (1/3)<012> (see Fig. 1). Steps of heights less than about 0.8 Å can be clearly resolved only with a field emission gun (FEG) (Fig. 2). The small steps are formed by the surface oscillating between the closely packed O and Al stacking layers. The bands of dark contrast (Fig. 2b) are the result of beam radiation damage to surface areas initially terminated with O ions.

Measuring the electric resistance of metals and alloys at high temperatures by a hardware-and-software system

2018 ◽  
pp. 60-64 ◽  
Author(s):  
M. Yu. Chernoskutov ◽  
A. D. Ivliev ◽  
V. V. Meshkov ◽  
A. O. Samoilov ◽  
A. S. Sosnin
Keyword(s):  
High Temperatures ◽  
Metals And Alloys ◽  
Software System ◽  
Electric Resistance ◽  
Hardware And Software System

Investigation of the physical properties of carbon under high temperatures (experimental studies)

2020 ◽  
Vol 63 (10) ◽  
pp. 1015-1036 ◽  
Author(s):  
A I Savvatimskii ◽  
S V Onufriev
Keyword(s):  
Physical Properties ◽  
High Temperatures ◽  
Experimental Studies

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

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