scholarly journals On Approach to Increase Density of Field Effect Transistors in an Inverter Circuit

2017 ◽  
Vol 3 (1/2) ◽  
pp. 01-12
Author(s):  
Pankratov E.L. ◽  
Bulaeva E.A.
2015 ◽  
Vol 3 (28) ◽  
pp. 7370-7378 ◽  
Author(s):  
Yuma Shimo ◽  
Takahiro Mikami ◽  
Hiroto T. Murakami ◽  
Shino Hamao ◽  
Hidenori Goto ◽  
...  

Field-effect transistors have been fabricated using [8]phenacene single-crystals, showing the maximumμvalue of 8.2 cm2V−1s−1. The CMOS inverter circuit has also been fabricated.


2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya

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