scholarly journals Dependence of the Xe flash lamps’ UV radiation efficiency on the volumetric power density of the discharge

2021 ◽  
pp. 24-29
Author(s):  
Sergei Kireev ◽  
Sergei Gavrish ◽  
Anna Kulebyakina ◽  
Sergei Shashkovskiy
Keyword(s):  
Growth Rate ◽  
Brightness Temperature ◽  
Temperature Dependence ◽  
Power Density ◽  
Linear Dependence ◽  
Spectral Region ◽  
Uv Light ◽  
Radiation Efficiency ◽  
Efficiency Change ◽  
Study Results

The study results of the peak and average electrical volumetric power density influence on the radiation efficiency and brightness temperature in the 200–300 nm bactericidal spectrum range are presented. A linear dependence of the radiation efficiency change in the 5.1–8.4 % range was obtained with the average volumetric power density increase from 177 to 390 kW/cm3. The brightness temperature dependence in the specified spectral region on the peak volumetric power density is a logarithmic character with decreasing growth rate when approaching 9 kK. This effect can be associated with both radiation blocking by vaporized quartz fumes and with UV light shielding by outer plasma layers

TEMPERATURE DEPENDENCE OF THE CRYSTAL GROWTH RATE IN POLAR GLACIERS

1987 ◽  
Vol 48 (C1) ◽  
pp. C1-661-C1-662 ◽  
Author(s):  
J. R. PETIT ◽  
P. DUVAL ◽  
C. LORIUS
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Temperature Dependence ◽  
Crystal Growth Rate

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

scholarly journals Role of carbon allocation efficiency in the temperature dependence of autotroph growth rates

2018 ◽  
Vol 115 (31) ◽  
pp. E7361-E7368 ◽  
Author(s):  
Bernardo García-Carreras ◽  
Sofía Sal ◽  
Daniel Padfield ◽  
Dimitrios-Georgios Kontopoulos ◽  
Elvire Bestion ◽  
...  
Keyword(s):  
Growth Rate ◽  
Temperature Dependence ◽  
Growth Rates ◽  
Carbon Allocation ◽  
Thermal Sensitivity ◽  
Potential Growth ◽  
Allocation Efficiency ◽  
Population Growth Rates ◽  
Performance Curves

Relating the temperature dependence of photosynthetic biomass production to underlying metabolic rates in autotrophs is crucial for predicting the effects of climatic temperature fluctuations on the carbon balance of ecosystems. We present a mathematical model that links thermal performance curves (TPCs) of photosynthesis, respiration, and carbon allocation efficiency to the exponential growth rate of a population of photosynthetic autotroph cells. Using experiments with the green alga, Chlorella vulgaris, we apply the model to show that the temperature dependence of carbon allocation efficiency is key to understanding responses of growth rates to warming at both ecological and longer-term evolutionary timescales. Finally, we assemble a dataset of multiple terrestrial and aquatic autotroph species to show that the effects of temperature-dependent carbon allocation efficiency on potential growth rate TPCs are expected to be consistent across taxa. In particular, both the thermal sensitivity and the optimal temperature of growth rates are expected to change significantly due to temperature dependence of carbon allocation efficiency alone. Our study provides a foundation for understanding how the temperature dependence of carbon allocation determines how population growth rates respond to temperature.

scholarly journals Real-Time Estimation of Disinfection By-Products through Differential UV Absorbance

Water ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 2536
Author(s):  
Guilherme Stéphanie ◽  
Dorea Caetano
Keyword(s):  
Water Treatment ◽  
Real Time ◽  
Distribution Systems ◽  
Uv Light ◽  
Time Estimation ◽  
Uv Absorbance ◽  
Water Treatment Plants ◽  
Study Results ◽  
Real Time Estimation ◽  
By Products

Efforts to control of unwanted disinfection by-products (DBPs) can be hindered by the relatively low-frequency data that is generated from DBP monitoring for regulatory purposes. Differential UV absorbance (DUVA) has the potential to overcome some of these difficulties as a relatively simple and low-cost technique for the estimation of regulated DBPs (i.e., trihalomethanes, THMs, and haloacetic acids, HAAs). DUVA is based on the principle that differences in UV absorbance at specific wavelengths before and after chlorination can be correlated to DBP occurrence. This project sought to assess a lab-based protocol for the determination of a site-specific linear calibration curve for in situ real-time estimations of DBPs from DUVA measurement in water treatment plants (WTPs). A field spectrophotometer probe capable of high frequency scans within the UV light wavelength spectra with light paths of 100 mm was used. Models were developed to estimate DBP levels, at a scale representative of DUVA and DBP levels that actually occur in the WTP under study. Results showed that level of uncertainty on DBP levels estimation is relatively low (23% for HAAs and 32% for THMs). Although DBP estimations through DUVA are not of regulatory value, they can be used for real-time estimation of DBP levels to better inform operational decision making in water treatment plants and management of DBPs in distribution systems.

The relation between the undercooling and the growth rate of YBa2Cu3O6+x superconductive oxide

1996 ◽  
Vol 11 (5) ◽  
pp. 1094-1100 ◽  
Author(s):  
Y. Nakamura ◽  
A. Endo ◽  
Y. Shiohara
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Linear Dependence ◽  
Mass Flux ◽  
Peritectic Reaction ◽  
Screw Dislocations ◽  
Quadratic Dependence

To clarify the effect of undercooling on the crystal growth of Y-123, the growth rate was measured with different undercoolings. The growth rate of the {100} face shows a quadratic dependence of undercooling, while that of the {001} face shows a linear dependence in the sample with nominal 123 composition. In the case with 211-rich composition, the growth rate of each face was larger than that compared with nominal 123 composition since the mass flux from 211 particle for peritectic reaction becomes large. Addition of excess 211 alters the undercooling dependence of Ra from quadratic to linear. It is considered that the entrapment of 211 particles into 123 crystals supplies step sources beside screw dislocations. The growth rate of the {001} face is larger than that of the {100} face up to 26° of undercooling.

Growth Rate and Temperature Dependence of Oxygen Incorporation in Si1-XGex Thin Films

2016 ◽  
Vol 75 (8) ◽  
pp. 551-560
Author(s):  
C. A. Jackson ◽  
A. J. Williams ◽  
P. W. Deelman
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Temperature Dependence ◽  
Oxygen Incorporation
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