Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

scholarly journals Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate

2002 ◽  
Vol 122 (5) ◽  
pp. 637-643
Author(s):  
Hidekazu Tsuchida ◽  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Isaho Kamata ◽  
Tamotsu Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
Schottky Barrier ◽  
High Voltage ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes

Very High Growth Rate Epitaxy Processes with Chlorine Addition

2007 ◽  
Vol 556-557 ◽  
pp. 157-160 ◽  
Author(s):  
Francesco La Via ◽  
Stefano Leone ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Electrical Characteristics ◽  
Standard Process ◽  
Characterization Methods ◽  
Deposition Chamber ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

2008 ◽  
Vol 600-603 ◽  
pp. 123-126 ◽  
Author(s):  
Francesco La Via ◽  
Gaetano Izzo ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Layer ◽  
Structural Characterization ◽  
Defect Density ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Characterization Methods ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.

Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

2007 ◽  
Vol 307 (2) ◽  
pp. 334-340 ◽  
Author(s):  
H. Pedersen ◽  
S. Leone ◽  
A. Henry ◽  
F.C. Beyer ◽  
V. Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Very High

A Technique For Rapid Thick Film Sic Epitaxial Growth

1997 ◽  
Vol 483 ◽  
Author(s):  
I. Khlebnikov ◽  
T. S. Sudarshan ◽  
V. Madangarli ◽  
M. A. Capano
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Structural Quality ◽  
Epitaxial Layers ◽  
Rocking Curve ◽  
X Ray

AbstractIn this paper we demonstrate the growth of thick SiC epitaxial layers (≥100 μm) of good structural quality at a high growth rate (>100 μm/hr) by controlling the vapor dynamics during conventional physical vapor transport (PVT) process. We propose that our PVT technique be used to ‘repair’ or ‘heal’ commercially available substrates dominated by micropipes, by ‘filling up’ the micropipes through crystal growth inside the micropipe. Extensive experiments performed on thick SiC epitaxial layers grown on Lely substrates indicate that the thick epitaxial layers are of single polytype of high structural quality, with a single peak X-ray rocking curve of less than 12 arcsecs FWHM.

The Role of Chlorine during High Growth Rate Epitaxy

2015 ◽  
Vol 821-823 ◽  
pp. 141-144 ◽  
Author(s):  
Robin Karhu ◽  
Ian Booker ◽  
Jawad ul Hassan ◽  
Ivan Ivanov ◽  
Erik Janzén
Keyword(s):  
Growth Rate ◽  
Charge Carrier ◽  
Growth Rates ◽  
Growth Process ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
High Growth ◽  
High Growth Rate ◽  
Charge Carrier Lifetime

The influence of chlorine has been investigated for high growth rates of 4H-SiC epilayers on 4o off-cut substrates. Samples were grown at a growth rate of approximately 50 and 100 μm/h and various Cl/Si ratios. The growth rate, net doping concentration and charge carrier lifetime have been studied as a function of Cl/Si ratio. This study shows some indications that a high Cl concentration in the growth cell leads to less availability of Si during the growth process.

Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate

2011 ◽  
Vol 46 (8) ◽  
pp. 1272-1275 ◽  
Author(s):  
S. Leone ◽  
F.C. Beyer ◽  
H. Pedersen ◽  
O. Kordina ◽  
A. Henry ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Very High

scholarly journals Does Corruption Act as a Deterrent to Foreign Direct Investment in Developing Countries?

2020 ◽  
Vol 11 (1) ◽  
pp. 18-34
Author(s):  
Sanjib Guha ◽  
Niazur Rahim ◽  
Bhagaban Panigrahi ◽  
Anh D. Ngo
Keyword(s):  
Growth Rate ◽  
Developing Countries ◽  
Foreign Direct Investment ◽  
Growth Rates ◽  
Growth And Development ◽  
Direct Investment ◽  
High Growth ◽  
High Growth Rate ◽  
Foreign Firms ◽  
Gdp Growth

Developing countries institute policies to attract Foreign Direct Investment (FDI) that promotes growth and development. Corruption disrupts and complicates the implementation of policies that govern the inflows of FDI and the operations of foreign firms; such interference with policies is more than likely to disrupt and lower the inflows of FDI. This paper evaluates whether or not corruption reduces inflows of FDI into each and every developing country. Our study shows that developing countries with high growth rate (> 6% annual GDP growth) attract more FDI than countries with low growth rates although they are both steeped in corruption. Multi-national Corporations (MNCs) seem willing to cope with corruption in countries with high growth rates.

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

2014 ◽  
Vol 778-780 ◽  
pp. 117-120 ◽  
Author(s):  
Hiroaki Fujibayashi ◽  
Masahiko Ito ◽  
Hideki Ito ◽  
Isaho Kamata ◽  
Masami Naitou ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Rates ◽  
High Speed ◽  
Smooth Surface ◽  
Doping Concentration ◽  
Defect Density ◽  
High Growth ◽  
High Growth Rate ◽  
Step Bunching

A single wafer type 150 mm vertical 4H-SiC epitaxial reactor with high-speed wafer rotation was developed. The rotation of the wafer at high speed significantly enhances the growth rate, and high growth rates of 40–50 μm/h are possible on 4°off-cut 4H-SiC substrates. In addition, a low defect density and smooth surface without macro step bunching can be achieved. Excellent uniformity of thickness and doping concentration was obtained for a 150 mm wafer at a high growth rate of 50 μm/h.

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