Temperature-Dependent Electrical Characterization of Multiferroic BiFeO3 Thin Films

2010 ◽  
Vol 4 (1) ◽  
Author(s):  
D. Hitchen ◽  
S. Ghosh
Keyword(s):  
Thin Films ◽  
Bismuth Ferrite ◽  
Electrical Characterization ◽  
Deposition Process ◽  
Memory Storage ◽  
Storage Devices ◽  
Contact Points ◽  
Multiferroic Bifeo3 ◽  
Polarization Characteristics

The polarization hysteresis and current leakage characteristics of bismuth ferrite, BiFeO3 (BFO) thin films deposited by pulsed laser deposition was measured while varying the temperature from 80 - 300 K in increments of 10 K, to determine the feasibility of BFO for capacitive applications in memory storage devices. Data is compared to the performance of prototypic ferroelectric barium strontium titanate, BaxSr1-xTiO3 (BST) under similar conditions. Finding contacts on the BFO samples that exhibited acceptable dielectric properties was challenging; and once identified, the polarization characteristics between them varied greatly. However, the non-uniformity among the contact points within each sample suggests that either the samples were defective (by contamination or growth process), or that the deposition process of the contacts may have undermined the functionality of the devices. Subjected to increasing temperatures, BFO's polarization improved, and though its polarizability was shown to be inferior to BST, the dielectric loss was less.

Structural and Electrical Characterization of La and Mn Co-Substituted Bismuth Ferrite Thin Films

2013 ◽  
Vol 448 (1) ◽  
pp. 42-49 ◽  
Author(s):  
Jayant Kolte ◽  
Aatish Daryapurkar ◽  
Prakash Apte ◽  
Prakash Gopalan
Keyword(s):  
Thin Films ◽  
Bismuth Ferrite ◽  
Electrical Characterization ◽  
Ferrite Thin Films

Microsrtuctures and Electrical Characterization of CVD-W and Mo Films as Contacts in Photocells

1994 ◽  
Vol 363 ◽  
Author(s):  
Kostadinka A. Gesheva ◽  
G. I. Stoyanov ◽  
R. Stefanov ◽  
E. S. Vlakhov
Keyword(s):  
Thin Films ◽  
Chemical Vapour ◽  
Electrical Characterization ◽  
Deposition Process ◽  
High Energy ◽  
Cdte Layer ◽  
Sublimation Method ◽  
Observed Behaviour ◽  
Microstructural Studies

AbstractTungsten and molybdenum hexacarbonyls were used as precursors in chemical vapour deposition process for preparation of W and Mo thin films. Pyrolitical decomposition of these precursors proceeds at temperatures of 250–400°C. Thin films with thicknesses in the range of 0,02–1 μm were deposited on different substrates - bare or covered with CdTe glass, and monocrystalline Si. Microstructural studies performed by Reflection High Energy Electron Diffraction (RHEED) method showed that films deposited tend to grow textured. This is discussed as probably due to differences in the growth rate for various crystal planes. The sheet resistances of the as-deposited W and Mo films are in the range of 20–30 Ω/□ for thicknesses of 0.15 μm. After thermal annealing the resistance of W films drops to about 2 Ω/□ and for Mo films to about 9Ω/□. Decreasing in the resistivity of the films is tightly connected with the decreasing in the impurities concentration. These impurities are considered to be in the base of the observed behaviour of the temperature dependence of the electrical resistance of the films. The CVD-W and Mo films are studied as back contacts on CdTe layer in CdS/CdTe photocells. In the paper some preliminary results are presented for the sheet and contact resistances when CVD W and Mo films are deposited at lower temperatures on the surface of CdTe layers, deposited by closespaced sublimation method. The thin film materials, produced by CVD technology look promising with respect to the required high deposition rates and extremely wide deposition areas in the mass production of solar cells.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

The Influence of Annealing Temperature on the Characteristics of 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 263-266
Author(s):  
Chien Chen Diao ◽  
Chia Ching Wu ◽  
Cheng Fu Yang ◽  
Chao Chin Chan
Keyword(s):  
Thin Films ◽  
Deposition Process ◽  
Leakage Currents ◽  
Cross Sectional ◽  
Si Substrates ◽  
Polarization Characteristics ◽  
Magnetron Sputter ◽  
Xrd Patterns ◽  
Top View ◽  
Better Than

In this study, 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + 1 wt% Bi2O3 (NBT-BT3) composition sintered at 1200oC for 2h is used as target to deposit the NBT-BT3 thin films. The excess 1wt% Bi2O3 is used to compensate the vaporization of Bi2O3 during the deposition process. Ferroelectric NBT-BT3 thin films are deposited on SiO2/Si and Pt/Ti/SiO2/Si substrates using RF magnetron sputter method using the ceramic target fabricated by ourselves. After depositing under the optimal parameters, the thin films are then heated by a conventional thermal annealing (CFA) process conducted in air at temperatures ranging from 600- 800oC for 60min. The morphologies of NBT- BT3 thin films are observed using SEM the crystalline structures of NBT-BT3 thin films are investigated using XRD patterns. The large memory window and stable leakage current density examination reveals that NBT-BT3 thin films annealed on 600oC are better than other thin films under different CTA temperatures. Finally, the top view and cross-sectional images of SEM, memory windows, leakage currents and polarization characteristics of NBT-BT3 thin films are also well developed.

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