Electrical Characterization of Thin Films Using Measurements of Electrical Resistivity

2013 ◽

Vol 8 (2) ◽

pp. 31-36 ◽

Cited By ~ 14

Author(s):

GP Panta ◽

DP Subedi

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Film Thickness ◽

Vapor Deposition ◽

Physical Vapor Deposition ◽

Electrical Characterization ◽

Probe Method ◽

Glass Substrates ◽

Engineering And Technology

This paper reports the results of electrical characterization of aluminum thin films. Uniform Al thin films were deposited by physical vapor deposition (PVD) technique on glass substrates. The electrical resistivity of the films as a function of film thickness was studied. These parameters have been measured by four-point probe method. The electrical resistivity was obtained by the measurement of current (in mA) and voltage in (mV) through the probe. The results showed that resistivity of the film decreases linearly with the film thickness in the range of the thickness studied in this work. Kathmandu University Journal of Science, Engineering and Technology Vol. 8, No. II, December, 2012, 31-36 DOI: http://dx.doi.org/10.3126/kuset.v8i2.7322

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ELECTRICAL CHARACTERIZATION OF EPITAXIAL BI:2201

Modern Physics Letters B ◽

10.1142/s0217984902003567 ◽

2002 ◽

Vol 16 (04) ◽

pp. 127-133 ◽

Cited By ~ 1

Author(s):

A. V. POP ◽

G. ILONCA ◽

MARIANA POP ◽

R. DELTOUR

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Magnetron Sputtering ◽

Normal State ◽

Electrical Resistance ◽

Electrical Characterization ◽

Dc Magnetron Sputtering ◽

Normal State Resistivity ◽

Partial Pressures

Bi2.1Sr1.9CuOy thin films (Bi:2201) were deposited onto heated single crystal (100) MgO substrates using inverted cylindrical DC magnetron sputtering with different partial pressures of oxygen in a sputtering gas. The behavior of the normal state resistivity function of temperature is strongly influenced by the composition of sputtering gas used in thin films synthesis. Near the transition to the superconducting state, electrical resistivity changes strongly from "metallic" to insulator (MI). The origin for the increase of electrical resistance was analyzed using some models for the localization of mobile carriers. A good linearity is obtained for ln R as a function of Tα for α = 1/10 and for R as a function of ln T. The last behavior agrees with the pinning and fragmentation of 1D stripes in CuO2 planes.

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Morphological and Electrical Characterization of Ti and Zr Sputter-Deposited Thin Films

Microscopy and Microanalysis ◽

10.1017/s1431927605051056 ◽

2005 ◽

Vol 11 (S03) ◽

pp. 126-129

Author(s):

E. F. Chinaglia ◽

I. C. Oppenheim

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Electrical Characterization ◽

Film Morphology ◽

Microelectronic Device ◽

Influence Of Substrate ◽

Sputter Deposited ◽

Modern Technologies ◽

Device Technology

Thin film morphology and electrical resistivity play an important role in modern technologies. In particular, subcomponents fabricated by Ti play an increasing role in microelectronic device technology as well as in the biomedical area [1-2]. Here the influence of substrate temperature (during deposition) and film thickness on the surface morphology and electrical resistivity of polycrystalline Ti and Zr thin films have been investigated.

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Electrical Characterization of Sige Thin Films

MRS Proceedings ◽

10.1557/proc-234-135 ◽

1991 ◽

Vol 234 ◽

Cited By ~ 20

Author(s):

J. A. Mccormack ◽

J.-P. Fleurial

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Liquid Phase ◽

Electrical Properties ◽

Hall Coefficient ◽

Liquid Phase Epitaxy ◽

Bulk Material ◽

Electrical Characterization ◽

Temperature Range

ABSTRACTAn apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, grown by liquid phase epitaxy reported here, are to illustrate the capabilities of the apparatus.

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