scholarly journals Fully Programmable Gaussian Function Generator Using Floating Gate MOS Transistor

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Richa Srivastava ◽  
Maneesha Gupta ◽  
Urvashi Singh

Floating gate MOS (FGMOS) based fully programmable Gaussian function generator is presented. The circuit combines the tunable property of FGMOS transistor, exponential characteristics of MOS transistor in weak inversion, and its square law characteristic in strong inversion region to implement the function. Two-quadrant current mode squarer is the core subcircuit of Gaussian function generator that helps to implement full Gaussian function for positive as well as negative input current. FGMOS implementation of the circuit reduces the current mismatching error and increases the tunability of the circuit. The performance of circuit is verified at 1.8 V in TSMC 0.18 μm CMOS, BSIM3, and Level 49 technology by using Cadence Spectre simulator.

2004 ◽  
Vol 814 ◽  
Author(s):  
R. K. Khillan ◽  
Y. Su ◽  
K. Varahramyan

AbstractWe present the studying of oxygen and moisture traps in MEH-PPV through the MIS Capacitance – Voltage (C-V) analysis, and the Attenuated Total Reflection Infrared (ATR IR) spectroscopy technique. The presence of oxygen studied by ATR IR has also been verified by optical images from high resolution optical microscope. In quasi-static C-V measurements of the MIS (Al/MEH-PPV/p-Si) capacitors made, an extension of the weak inversion region was measured before strong inversion, which becomes more pronounced with aging. This increase in the weak inversion region is attributed to electron trapping by oxygen to form negative ions in the MEH-PPV layer. ATR IR spectroscopy shows the formation of carbonyl peak at 1651 cm−1 with aging, which is due to the presence of oxygen. Both the C-V analysis and Attenuated Total Reflection IR Spectroscopy are powerful tools for investigating the degradation of MEH-PPV polymer.


Author(s):  
Reza Zarei ◽  
Moora Maali

In this paper, a current-mode analog multiplier circuit is proposed that utilizes MOS translinear principle. The parameters of TSMC 0.18µm technology are used to design the proposed multiplier that employs CMOS transistors operating in weak inversion region. Simulations are performed by HSPICE for the circuit to prove its great merits of; low power consumption (100µW), low supply voltage (1.6V), body effect immunity, wide input range (±100nA), bandwidth of 1 MHz, and THD of 4%.


2017 ◽  
Vol 24 (6) ◽  
pp. 2753-2764 ◽  
Author(s):  
G. S. Abarca-Jiménez ◽  
J. Mares-Carreño ◽  
M. A. Reyes-Barranca ◽  
B. Granados-Rojas ◽  
S. Mendoza-Acevedo ◽  
...  

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