A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2006.05.016 ◽

2007 ◽

Vol 47 (2-3) ◽

pp. 379-383 ◽

Author(s):

T.K. Chiang

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs

2005 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2005.1635330 ◽

2006 ◽

Author(s):

T.K. Chiang

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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A compact, analytical two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/20/12/005 ◽

2005 ◽

Vol 20 (12) ◽

pp. 1173-1178 ◽

Author(s):

Te-Kuang Chiang

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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A Quasi-Two-Dimensional Threshold Voltage Model for Fully Depleted SOI LDMOS

2008 4th International Conference on Wireless Communications, Networking and Mobile Computing ◽

10.1109/wicom.2008.460 ◽

2008 ◽

Author(s):

Xiu-Long Wu ◽

Jun-Ning Chen ◽

Dao-Ming Ke

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Threshold Voltage Model

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Two-Dimensional Analytical Threshold Voltage Model of Nanoscale Fully Depleted SOI MOSFET With Electrically Induced S/D Extensions

IEEE Transactions on Electron Devices ◽

10.1109/ted.2005.850624 ◽

2005 ◽

Vol 52 (7) ◽

pp. 1568-1575 ◽

Author(s):

M.J. Kumar ◽

A.A. Orouji

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Threshold Voltage Model

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A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.054301 ◽

2012 ◽

Vol 51 ◽

pp. 054301 ◽

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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Concise Analytical Threshold Voltage Model for Cylindrical Fully Depleted Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.2948 ◽

2005 ◽

Vol 44 (5A) ◽

pp. 2948-2952 ◽

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2011.11.2.111 ◽

2011 ◽

Vol 11 (2) ◽

pp. 111-120 ◽

Author(s):

Chung-Ha Suh

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted ◽

Surrounding Gate

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A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.054301 ◽

2012 ◽

Vol 51 (5R) ◽

pp. 054301 ◽

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

Chinese Physics B ◽

10.1088/1674-1056/23/1/018501 ◽

2014 ◽

Vol 23 (1) ◽

pp. 018501 ◽

Author(s):

Cong Li ◽

Yi-Qi Zhuang ◽

Li Zhang ◽

Gang Jin

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Surrounding Gate ◽

Effect Transistor ◽

Dual Material ◽

Threshold Voltage Model

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Two Dimensional Analytical Threshold Voltage Model of Nanoscale Strained Si/Si1–x Gex MOSFETs Including Quantum Mechanical Effects

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2012.2044 ◽

2012 ◽

Vol 9 (3) ◽

pp. 441-447

Author(s):

Kang Eng Siew ◽

Yau Wei Heong ◽

Sohail Anwar ◽

Razali Ismail

Keyword(s):

Threshold Voltage ◽

Quantum Mechanical ◽

Two Dimensional ◽

Strained Si ◽

Mechanical Effects ◽

Quantum Mechanical Effects ◽

Threshold Voltage Model

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