scholarly journals Active Matrix Driving and Circuit Simulation

10.5772/27867 ◽  
2011 ◽  
Author(s):  
Makoto Watanabe
Keyword(s):  
Circuit Simulation ◽  
Active Matrix

A New AC-Driving Method for Active-Matrix OLED Displays

2005 ◽  
Vol 475-479 ◽  
pp. 1901-1904
Author(s):  
Xin Fa Chen ◽  
Yujuan Si ◽  
Yi Zhao ◽  
Shi Yong Liu
Keyword(s):  
Recovery Time ◽  
Circuit Simulation ◽  
Current Source ◽  
Active Matrix ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Driving Mode ◽  
Organic Light ◽  
Pixel Circuit ◽  
Simulation Results

The lifetime of organic light-emitting devices can be influenced by the OLED material and structure, electrode material, driving mode and so on. Among all these factors, OLED driving method has been regarded as one of the most important factors, and it is well known that ac-driving mode improves the lifetime of OLED, especially pulse-driving mode with a reversed-biased voltage on OLED. In this article, a new ac-driving mode for Active-Matrix OLED is proposed on basic fabrication of two-TFT current source pixel circuit. Simulation has been done on the pixel and 1×4 matrix circuits, and simulation results have demonstrated that OLED is in reversed-biased state during recovery time. At last, a practical peripheral circuit that can provide achieve an ac-driving mode has been designed.

Nonlinear Circuit Simulation and Modeling

2018 ◽  
Author(s):  
José Carlos Pedro ◽  
David E. Root ◽  
Jianjun Xu ◽  
Luís Cótimos Nunes
Keyword(s):  
Circuit Simulation ◽  
Simulation And Modeling ◽  
Nonlinear Circuit

Editorial: Techniques for nonlinear circuit simulation

1994 ◽  
Vol 141 (4) ◽  
pp. 241
Author(s):  
P.J. Mole ◽  
G.M.S. Rokos
Keyword(s):  
Circuit Simulation ◽  
Nonlinear Circuit

Simple Circuit Simulation Models for Eddy Current in Magnetic Sheets and Wires

2014 ◽  
Vol 134 (4) ◽  
pp. 173-181 ◽  
Author(s):  
Yuji Shindo ◽  
Osamu Noro
Keyword(s):  
Eddy Current ◽  
Circuit Simulation ◽  
Simulation Models ◽  
Simple Circuit

A Numerical Analysis Method to Investigate Display Characteristics of Plasma Display Panels using Fluid Simulation with Circuit Simulation

2011 ◽  
Vol 131 (12) ◽  
pp. 1024-1030
Author(s):  
Yoshikuni Hirano ◽  
Keiji Ishii ◽  
Takenobu Usui ◽  
Yukio Murakami ◽  
Masahiko Seki
Keyword(s):  
Numerical Analysis ◽  
Circuit Simulation ◽  
Fluid Simulation ◽  
Analysis Method ◽  
Numerical Analysis Method ◽  
Plasma Display Panels ◽  
Plasma Display

Review of Development and Performance Evaluation of Active-matrix Nanocrystalline Si Electron Emitter Array for Massively Parallel Electron Beam Direct-write Lithography

2015 ◽  
Vol 135 (6) ◽  
pp. 221-229
Author(s):  
Naokatsu Ikegami ◽  
Akira Kojima ◽  
Hiroshi Miyaguchi ◽  
Takashi Yoshida ◽  
Shinya Yoshida ◽  
...  
Keyword(s):  
Electron Beam ◽  
Performance Evaluation ◽  
Massively Parallel ◽  
Direct Write ◽  
Active Matrix ◽  
Electron Emitter ◽  
Emitter Array ◽  
And Performance ◽  
Nanocrystalline Si

Application of Two Mixed Potential Integral Equations to Electromagnetic-circuit Simulation of Three-dimensional Interconnects in Layered Media

PIERS Online ◽  
2010 ◽  
Vol 6 (6) ◽  
pp. 594-599 ◽  
Author(s):  
Nur Kurt-Karsilayan ◽  
Krzysztof A. Michalski
Keyword(s):  
Integral Equations ◽  
Circuit Simulation ◽  
Three Dimensional ◽  
Layered Media ◽  
Mixed Potential

Failure Analysis Due to Slightly Unetched Hard Mask Using Nano Probe

2013 ◽  
Author(s):  
Jong Hak Lee ◽  
Jong Eun Kim ◽  
Chang Su Park ◽  
Nam Il Kim ◽  
Jang Won Moon ◽  
...  
Keyword(s):  
Leakage Current ◽  
Circuit Simulation ◽  
The State ◽  
Physical Analysis ◽  
Cross Sectional ◽  
Hard Mask ◽  
Current Flows ◽  
Voltage Contrast ◽  
The One ◽  
Zero Voltage

Abstract In this work, a slightly unetched gate hard mask failure was analyzed by nano probing. Although unetched hard mask failures are commonly detected from the cross sectional view with FIB or FIB-TEM and planar view with the voltage contrast, in this case of the very slightly unetched hard mask, it was difficult to find the defects within the failed area by physical analysis methods. FIB is useful due to its function of milling and checking from the one region to another region within the suspected area, but the defect, located under contact was very tiny. So, it could not be detected in the tilted-view of the FIB. However, the state of the failure could be understood from the electrical analysis using a nano probe due to its ability to probe contact nodes across the fail area. Among the transistors in the fail area, one transistor’s characteristics showed higher leakage current and lower ON current than expected. After physical analysis, slightly remained hard mask was detected by TEM. Chemical processing was followed to determine the gate electrode (WSi2) connection to tungsten contact. It was also proven that when gate is floated, more leakage current flows compared to the state that the zero voltage is applied to the gate. This was not verified by circuit simulation due to the floating nodes.

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