scholarly journals CdS(Se) and PbS(Se) Quantum Dots with High Room Temperature Quantum Efficiency in the Fluorine-Phosphate Glasses

2017 ◽  
Author(s):  
Elena Kolobkova ◽  
Nikolay Nikonorov
Keyword(s):  
Quantum Dots ◽  
Quantum Efficiency ◽  
Room Temperature ◽  
Phosphate Glasses

Colloidal CdTe/HgTe quantum dots with high photoluminescence quantum efficiency at room temperature

1999 ◽  
Vol 75 (12) ◽  
pp. 1694-1696 ◽  
Author(s):  
Stephen V. Kershaw ◽  
Mike Burt ◽  
Mike Harrison ◽  
Andrey Rogach ◽  
Horst Weller ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Efficiency ◽  
Room Temperature

Determination of Lead Ion Based on Quenching of Room Temperature Phosphorescence of Mn-doped ZnS Quantum Dots

2013 ◽  
Vol 40 (11) ◽  
pp. 1680-1685
Author(s):  
Juan CHEN ◽  
Jie-Fang SUN ◽  
Lei GUO ◽  
Jian-Wei XIE ◽  
Guo-Xiang SUN
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Lead Ion ◽  
Room Temperature Phosphorescence ◽  
Mn Doped

Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots

2009 ◽  
Vol 6 (S2) ◽  
pp. S650-S653
Author(s):  
L. Nevou ◽  
J. Mangeney ◽  
M. Tchernycheva ◽  
F. H. Julien ◽  
F. Guillot ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Carrier Relaxation ◽  
Ultrafast Carrier

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

Pure room temperature phosphorescence emission of organic host-guest doped system with quantum efficiency of 64%

2021 ◽  
Author(s):  
Xiaoqing Liu ◽  
Wenbo Dai ◽  
Qian Junjie ◽  
Yunxiang Lei ◽  
Miaochang Liu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Room Temperature ◽  
Room Temperature Phosphorescence ◽  
Halogen Atoms ◽  
System P ◽  
Phosphorescence Emission

A new doped system with pure phosphorescent emission is constructed using four 1-(4-(diphenylamino)phenyl)-2-phenylethan-1-one derivatives containing halogen atoms as the guests and benzophenone as the host. That is, the doped system...

Room temperature synthesis of Sn2+ doped highly luminescent CsPbBr3 quantum dots for high CRI white light-emitting diodes

Nanoscale ◽  
2021 ◽  
Author(s):  
Dongdong Yan ◽  
Qionghua Mo ◽  
Shuangyi Zhao ◽  
Wensi Cai ◽  
Zhigang Zang
Keyword(s):  
Quantum Dots ◽  
Quantum Yield ◽  
White Light ◽  
Room Temperature ◽  
Temperature Synthesis ◽  
Light Emitting ◽  
Photoluminescence Quantum Yield ◽  
Hot Injection ◽  
White Light Emitting Diodes ◽  
Cspbbr3 Quantum Dots

With a high photoluminescence quantum yield (PLQY) being able to exceed 90% for those prepared by hot injection method, CsPbBr3 quantum dots (QDs) have attracted intensive attentions for white light-emitting...

scholarly journals Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 690
Author(s):  
Leonardo Ranasinghe ◽  
Christian Heyn ◽  
Kristian Deneke ◽  
Michael Zocher ◽  
Roman Korneev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Penetration Depth ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Green Laser ◽  
Significant Loss ◽  
Blue Laser ◽  
Ambient Conditions ◽  
Thermal Escape ◽  
Intensity Loss

Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge. Therefore, we study photoluminescence (PL) emission at and close to room temperature from self-assembled strain-free GaAs quantum dots (QDs) in refilled AlGaAs nanoholes on (001)GaAs substrate. Two major obstacles for room temperature operation are observed. The first is a strong radiative background from the GaAs substrate and the second a significant loss of intensity by more than four orders of magnitude between liquid helium and room temperature. We discuss results obtained on three different sample designs and two excitation wavelengths. The PL measurements are performed at room temperature and at T = 200 K, which is obtained using an inexpensive thermoelectric cooler. An optimized sample with an AlGaAs barrier layer thicker than the penetration depth of the exciting green laser light (532 nm) demonstrates clear QD peaks already at room temperature. Samples with thin AlGaAs layers show room temperature emission from the QDs when a blue laser (405 nm) with a reduced optical penetration depth is used for excitation. A model and a fit to the experimental behavior identify dissociation of excitons in the barrier below T = 100 K and thermal escape of excitons from QDs above T = 160 K as the central processes causing PL-intensity loss.

The Effect of Electron Irradiation on the Structure of Sodium Aluminum-Iron Phosphate Glasses

MRS Advances ◽  
2016 ◽  
Vol 1 (63-64) ◽  
pp. 4227-4232 ◽  
Author(s):  
S.V. Stefanovsky ◽  
O.I. Stefanovsky ◽  
M.I Kadyko ◽  
V.A. Zhachkin ◽  
L.D. Bogomolova
Keyword(s):  
Room Temperature ◽  
Structural Evolution ◽  
Iron Phosphate ◽  
Esr Spectra ◽  
Phosphate Glasses ◽  
Water Molecules ◽  
Oxygen Hole ◽  
Bending Modes ◽  
Iron Phosphate Glasses ◽  
Hole Centers

ABSTRACTGlasses of the series (mol.%) 40 Na2O, (20-x) Al2O3, x Fe2O3, 40 P2O5 were irradiated with 8 MeV electrons to doses equivalent of 0.1, 0.5, and 1.0 MGy and characterized by FTIR spectroscopy and ESR at room temperature. FTIR spectra of all the glasses consist of strong bands due to O-P-O stretching modes in (PO4)3- and (P2O7)4- units at 1000-1200 cm-1, P-O-P stretching modes at 900-950 cm-1 (νas) and 700-750 cm-1 (νs), and bending modes in the PO4 units. The wavenumber range lower 800 cm-1 has some contribution due to stretching modes in MO4 and MO6 (M = Al, Fe) units. Moreover the bands at 3300-3700 cm-1 and 1550-1650 cm-1 due to stretching and bending modes in both absorbed and structurally bound H2O molecules were present. As irradiation dose increases the bands due to stretching and bending modes in water molecules and M-O-H bonds become stronger and are split. No essential changes with increasing dose were observed within the spectral range of stretching modes of the O-P-O and P-O-P bonds. Irradiation yields phosphorus-oxygen hole centers - PO42- (D5) and PO42- (D6), and PO32- ion-radicals (D2) observable in ESR spectra of low-Fe glasses. At x>5 their responses are overlapped with strong broad line due to Fe(III). On the whole, with the increase in iron content the glass structural evolution decrease.

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