Gate Leakage Current in GaN HEMT’s: A Degradation Modeling Approach

Electrical and Electronic Engineering ◽

10.5923/j.eee.20120206.09 ◽

2013 ◽

Vol 2 (6) ◽

pp. 397-402 ◽

Author(s):

A. Mimouni ◽

T. Fernández ◽

J. Rodriguez-Tellez ◽

A. Tazon ◽

H. Baudrand ◽

...

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Degradation Modeling ◽

Modeling Approach

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Reduction of On-Resistance in Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Gate Leakage Current

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.128.885 ◽

2008 ◽

Vol 128 (6) ◽

pp. 885-889

Author(s):

Kazuki Nomoto ◽

Masataka Satoh ◽

Tohru Nakamura

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gan Hemts ◽

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Fast Gate Leakage Current Monitor With Large Dynamic Range

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2021.3068628 ◽

2021 ◽

pp. 1-1

Author(s):

Kushagra Bhatheja ◽

Xiankun Jin ◽

Matthew Strong ◽

Degang Chen

Keyword(s):

Leakage Current ◽

Dynamic Range ◽

Gate Leakage Current ◽

Gate Leakage ◽

Large Dynamic Range

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Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet : Overview and analysis of unique properties for converter protection and possible future safety management

2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) ◽

10.1109/esars-itec.2018.8607551 ◽

2018 ◽

Author(s):

Frederic Richardeau ◽

Francois Boige ◽

Stephane Lefebvre

Keyword(s):

Leakage Current ◽

Failure Mode ◽

Safety Management ◽

Open Circuit ◽

Gate Leakage Current ◽

Gate Leakage ◽

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Defect spectroscopy using 1/fγ noise of gate leakage current in ultrathin oxide MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(03)00220-x ◽

2003 ◽

Vol 47 (11) ◽

pp. 1973-1981 ◽

Author(s):

Jonghwan Lee ◽

Gijs Bosman

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Ultrathin Oxide

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Reduction of on-resistance in ion-implanted GaN/AlGaN/GaN HEMTs with low gate leakage current

Electronics and Communications in Japan ◽

10.1002/ecj.10213 ◽

2010 ◽

Vol 93 (6) ◽

pp. 19-24 ◽

Author(s):

Kazuki Nomoto ◽

Masataka Satoh ◽

Tohru Nakamura

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gan Hemts ◽

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Investigating a Novel Normally-On AlGaN/GaN Capped PHEMT and the Effects of Cap Layers Thickness on its Gate Leakage Current

Electrical Engineering (ICEE), Iranian Conference on ◽

10.1109/icee.2018.8472634 ◽

2018 ◽

Author(s):

Tara Ghafouri ◽

Alireza Salehi ◽

Hedie Mahmoodnia

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

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Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Solid State Ionics ◽

10.1016/j.ssi.2018.11.004 ◽

2018 ◽

Vol 328 ◽

pp. 30-34 ◽

Author(s):

Qi Wang ◽

Yaomi Itoh ◽

Tohru Tsuruoka ◽

Masakazu Aono ◽

Deyan He ◽

...

Keyword(s):

Oxygen Vacancy ◽

Leakage Current ◽

Gate Bias ◽

Gate Leakage Current ◽

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Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1598 ◽

2004 ◽

Vol 43 (No. 12B) ◽

pp. L1598-L1600 ◽

Author(s):

Takuji Hosoi ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Effect Transistor ◽

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.02.026 ◽

2017 ◽

Vol 109 ◽

pp. 13-22 ◽

Author(s):

Monika Bhattacharya ◽

Jyotika Jogi ◽

R.S. Gupta ◽

Mridula Gupta

Keyword(s):

Leakage Current ◽

Noise Figure ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Minimum Noise ◽

Minimum Noise Figure

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