scholarly journals GROUND STATE ENERGY LEVEL OF Si-BASE QUANTUM WELLS DETECTED BY ADMITTANCE SPECTROSCOPY

1998 ◽  
Vol 47 (7) ◽  
pp. 1171
Author(s):  
LIN FENG ◽  
SHENG CHI ◽  
KE LIAN ◽  
ZHU JIAN-HONG ◽  
GONG DA-WEI ◽  
...  
Author(s):  
Saren Gaowa ◽  
Yan-Bo Geng ◽  
Zhao-Hua Ding ◽  
Jing-Lin Xiao

In this research, the effects of magnetism and parabolic potential on strongly coupled polaron characteristics within asymmetric Gaussian quantum wells (AGQWs) were investigated. To do so, the following six parameters were studied, temperature, AGQW barrier height, Gaussian confinement potential (GCP) width, confinement strengths along the directions of [Formula: see text] and [Formula: see text], as well as magnetic field cyclotron frequency. The relationships among frequency oscillation, AGQW parameters and polaron ground state energy in RbCl crystal were studied based on linear combination operator and Lee–Low–Pines unitary transformation. It was concluded that ground state energy absolute value was decreased by increasing GCP width and temperature, and increased with the increase of confinement strength along [Formula: see text] and [Formula: see text] directions, cyclotron frequency of magnetic field and barrier height of AGQW. It was also found that vibrational frequency was increased by enhancing confinement strengths along the directions of [Formula: see text] and [Formula: see text], magnetic field cyclotron frequencies, barrier height AGQW and temperature and decreased with the increase of GCP width.


2006 ◽  
Vol 20 (02) ◽  
pp. 133-140
Author(s):  
SHIHUA HUANG ◽  
FENGMIN WU ◽  
JI LIN ◽  
FANG LU

Absorption spectra of Si 0.6 Ge 0.4/ Si quantum wells are characterized by photocurrent measurements. The absorption coefficients of two different transitions, namely the transition between the Si band states and the discrete energy level in quantum wells, and the interlevel transition in quantum wells are deduced. They are directly proportional to (ℏω-ΔE)3/2 and δ(ℏω-Eeh), respectively. The valence band offsets of Si 0.6 Ge 0.4/ Si interface are 297 meV. The ground state energy levels in valence band and conduction band Si 0.6 Ge 0.4/ Si quantum wells are 37 meV and 23 meV, respectively.


2004 ◽  
Vol 106 (2) ◽  
pp. 177-181
Author(s):  
M.R. Kim ◽  
C. Tong ◽  
S.K. Kim ◽  
M.S. Son ◽  
D.H. Shin ◽  
...  

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