AbstractIt is very important to select superior interlayer Pre Metal Dielectric (PMD) materials which can act as a penetration barrier to various impurities created by the Chemical Mechanical Polishing (CMP) processes. In this paper, hot carrier degradation and device characteristics were investigated with material variation of PMD-1 layers, which were split by LP-TEOS, SR-oxide, PE-oxynitride, PE-nitride and PE-TEOS films. It was observed that the PE-oxynitride and PEnitride using plasma was greatly deteriorated in hot carrier effect in comparison with silicon oxide. Consequently, it is clearly shown that silicon oxide turned out to be a better PMD-1 material than both PE-oxynitride and PE-nitride. From the results, it is suggested that LP-TEOS film is the best PMD-1 material among the silicon oxide samples.
STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFET