scholarly journals Effect of oxygen on stability performance of the IZO junctionless thin film transistors

2013 ◽  
Vol 62 (13) ◽  
pp. 137201
Author(s):  
Zhang Geng-Ming ◽  
Guo Li-Qiang ◽  
Zhao Kong-Sheng ◽  
Yan Zhong-Hui
2013 ◽  
Vol 1 (40) ◽  
pp. 6613 ◽  
Author(s):  
Jagan Singh Meena ◽  
Min-Ching Chu ◽  
Yu-Cheng Chang ◽  
Hsin-Chiang You ◽  
Ranjodh Singh ◽  
...  

2014 ◽  
Vol 590 ◽  
pp. 229-233
Author(s):  
Sheng Po Chang

We fabricated and studied the electrical characteristics of thin-film transistors with an amorphous zinc-tin–oxide (a-ZTO) channel, which was deposited by radio frequency magnetron co-sputtering under different oxygen partial pressures. The effect of varying the oxygen concentration on the electrical properties and device performance of the a-ZTO TFTs was investigated. A positive shift observed in the threshold voltage with increasing oxygen suggests that the number of oxygen vacancies in the a-ZTO film decreased. With an oxygen flow rate of 4 %, a threshold voltage of 2.25 V, an on-off current ratio of 2.1 × 103, and a subthreshold slope of 0.8 V·dec−1were obtained.


2016 ◽  
Vol 122 (10) ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Wen-Qing Zhu ◽  
Jian-Hua Zhang ◽  
Xue-Yin Jiang ◽  
...  

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