Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets

2013 ◽  
Vol 1 (40) ◽  
pp. 6613 ◽  
Author(s):  
Jagan Singh Meena ◽  
Min-Ching Chu ◽  
Yu-Cheng Chang ◽  
Hsin-Chiang You ◽  
Ranjodh Singh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxygen Plasma ◽  
Surface States ◽  
Zno Films ◽  
Effect Of Oxygen

Novel patterning of flexible and transparent Ag nanowire electrodes using oxygen plasma treatment

2018 ◽  
Vol 6 (35) ◽  
pp. 9394-9398 ◽  
Author(s):  
Hoijoon Kim ◽  
Giseok Lee ◽  
Stefan Becker ◽  
Ji-Seon Kim ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Ag Nanowire

We explore a novel patterning method for flexible and transparent Ag nanowire electrodes using oxygen plasma treatment without a toxic etchant and its application to source/drain electrodes of MoS2-based thin-film transistors.

RF Power Effect on the Properties of Sputtered ZnO Films for Channel Layer Applications in Thin-Film Transistors

2012 ◽  
Vol 41 (7) ◽  
pp. 1962-1969 ◽  
Author(s):  
M.I. Medina-Montes ◽  
H. Arizpe-Chávez ◽  
L.A. Baldenegro-Pérez ◽  
M.A. Quevedo-López ◽  
R. Ramírez-Bon
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Films ◽  
Rf Power ◽  
Channel Layer ◽  
Power Effect

Effect of oxygen to argon flow ratio on the properties of Al-doped ZnO films for amorphous silicon thin film solar cell applications

2013 ◽  
Vol 529 ◽  
pp. 50-53 ◽  
Author(s):  
Yang-Shih Lin ◽  
Shui-Yang Lien ◽  
Yung-Chuan Huang ◽  
Chao-Chun Wang ◽  
Chueh-Yang Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Thin Film Solar Cell ◽  
Zno Films ◽  
Flow Ratio ◽  
Silicon Thin Film ◽  
Argon Flow ◽  
Doped Zno ◽  
Effect Of Oxygen

Effect of Oxygen Partial Pressure on Electrical Characteristics of Amorphous Zinc-Tin-Oxide Thin-Film Transistors

2014 ◽  
Vol 590 ◽  
pp. 229-233
Author(s):  
Sheng Po Chang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Subthreshold Slope ◽  
Partial Pressures ◽  
Zinc Tin Oxide ◽  
Effect Of Oxygen

We fabricated and studied the electrical characteristics of thin-film transistors with an amorphous zinc-tin–oxide (a-ZTO) channel, which was deposited by radio frequency magnetron co-sputtering under different oxygen partial pressures. The effect of varying the oxygen concentration on the electrical properties and device performance of the a-ZTO TFTs was investigated. A positive shift observed in the threshold voltage with increasing oxygen suggests that the number of oxygen vacancies in the a-ZTO film decreased. With an oxygen flow rate of 4 %, a threshold voltage of 2.25 V, an on-off current ratio of 2.1 × 103, and a subthreshold slope of 0.8 V·dec−1were obtained.

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