scholarly journals Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor

2020 ◽  
Vol 69 (20) ◽  
pp. 207301
Author(s):  
Rui-Jing Hao ◽  
Hong-Xia Guo ◽  
Xiao-Yu Pan ◽  
Ling Lyu ◽  
Zhi-Feng Lei ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Damage Effect ◽  
High Electron ◽  
Displacement Damage ◽  
High Electron Mobility

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

2016 ◽  
Vol 25 (4) ◽  
pp. 048503 ◽  
Author(s):  
Xiao-Wen Xi ◽  
Chang-Chun Chai ◽  
Gang Zhao ◽  
Yin-Tang Yang ◽  
Xin-Hai Yu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Electromagnetic Pulse ◽  
High Electron Mobility Transistor ◽  
Damage Effect ◽  
High Electron ◽  
High Electron Mobility

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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