Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

2015 ◽  
Vol 24 (4) ◽  
pp. 048502 ◽  
Author(s):  
Xin-Hai Yu ◽  
Chang-Chun Chai ◽  
Yang Liu ◽  
Yin-Tang Yang ◽  
Xiao-Wen Xi
Keyword(s):  
Experimental Study ◽  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Damage Effect ◽  
High Electron ◽  
High Electron Mobility ◽  
High Power Microwave ◽  
Power Microwave

scholarly journals High power microwave damage mechanism on high electron mobility transistor

2016 ◽  
Vol 65 (16) ◽  
pp. 168501
Author(s):  
Li Zhi-Peng ◽  
Li Jing ◽  
Sun Jing ◽  
Liu Yang ◽  
Fang Jin-Yong
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Damage Mechanism ◽  
High Electron ◽  
High Electron Mobility ◽  
High Power Microwave ◽  
Power Microwave

High-power AlGaN∕GaN dual-gate high electron mobility transistor mixers on SiC substrates

2004 ◽  
Vol 40 (12) ◽  
pp. 775 ◽  
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Kosugi ◽  
S. Sugitani ◽  
N. Shigekawa ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Dual Gate

scholarly journals Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor

2020 ◽  
Vol 69 (20) ◽  
pp. 207301
Author(s):  
Rui-Jing Hao ◽  
Hong-Xia Guo ◽  
Xiao-Yu Pan ◽  
Ling Lyu ◽  
Zhi-Feng Lei ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Damage Effect ◽  
High Electron ◽  
Displacement Damage ◽  
High Electron Mobility

scholarly journals A modeling and performance of the triple field plate HEMT

2019 ◽  
Vol 10 (1) ◽  
pp. 398
Author(s):  
Kourdi Zakarya ◽  
Abdelkhader Hamdoun
Keyword(s):  
Aluminum Oxide ◽  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Field Peak ◽  
And Performance ◽  
Multiple Field

We present this work by two steps. In the first one, the new structure proposed of the FP-HEMTs device (Field plate High Electron Mobility Transistor) with a T-gate on an 4H-SIC substrate to optimize these electrical performances, multiple field-plates were used with aluminum oxide to split the single electric field peak into several smaller peaks, and as passivation works to reduce scaling leakage current. In the next, we include a modeling of a simulation in the Tcad-Silvaco Software for realizing the study of the influence of negative voltage applied to gate T-shaped in OFF state time and high power with ambient temperature, the performance differences between the 3FP and the SFP devices are discussed in detail.

scholarly journals Self heating Effects in GaN High Electron Mobility Transistor for Different Passivation Material

2020 ◽  
Vol 70 (5) ◽  
pp. 511-514
Author(s):  
Subhash Chander ◽  
Partap Singh ◽  
Samuder Gupta ◽  
D. S. Rawal ◽  
Mridula Gupta
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Self Heating ◽  
Channel Temperature ◽  
Passivation Layers ◽  
Different Temperatures ◽  
Output Characteristics

In this paper effect of self-heating has been studied of AlGaN/GaN high electron mobility transistor (HEMT) for different passivation layers which is promising device for high power at high frequencies. The different passivation layers used are aluminium oxide (Al2O3), silicon nitride (SiN) and silicon dioxide (SiO2). The device GaN HEMT has been simulated and characterised for its thermal behaviour by the distribution of lattice temperature inside the device using device simulation tool ATLAS from SILVACO. The transfer and output characteristics with and without self-heating has been studied for electrical characterisation. The channel temperature for different passivation observed is 448 K, 456 K and 471 K forAl2O3, SiN and SiO2 respectively. The observed different temperatures are due to difference in their thermal conductivity. This channel temperature information is critical to study the reliability of the device at high power levels.

Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications

2016 ◽  
Vol 45 (7) ◽  
pp. 3285-3289 ◽  
Author(s):  
Ting-En Hsieh ◽  
Yueh-Chin Lin ◽  
Chung-Ming Chu ◽  
Yu-Lin Chuang ◽  
Yu-Xiang Huang ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Metal Structures
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