Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave
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2016 ◽
Vol 55
(4S)
◽
pp. 04EG03
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2019 ◽
Vol 10
(1)
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pp. 398
2002 ◽
Vol 41
(Part 2, No. 1A/B)
◽
pp. L20-L23
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2016 ◽
Vol 45
(7)
◽
pp. 3285-3289
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