Fabricating GaN-based LEDs on (−2 0 1) β-Ga2O3 substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition
1996 ◽
Vol 288
(1-2)
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pp. 116-119
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2005 ◽
Vol 283
(1-2)
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pp. 87-92
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1999 ◽
Vol 17
(3)
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pp. 1101
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