Reducing the contact resistance in bottom-contact-type organic field-effect transitors using an AgO x interface layer

2017 ◽  
Vol 10 (9) ◽  
pp. 091601 ◽  
Author(s):  
Masahiro Minagawa ◽  
Yeongin Kim ◽  
Martin Claus ◽  
Zhenan Bao
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Interface Layer ◽  
Contact Type ◽  
Bottom Contact ◽  
X Interface

Improvement of Short Channel Mobility and Operational Stability of Pentacene Bottom-Contact Transistors with a Sulfuric Acid and Hydrogen Peroxide Mixture (SPM) Treatment of Au Electrodes

2006 ◽  
Vol 965 ◽  
Author(s):  
Haruo Kawakami ◽  
Takahiko Maeda ◽  
Hisato Kato
Keyword(s):  
Hydrogen Peroxide ◽  
Sulfuric Acid ◽  
Contact Resistance ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Channel Length ◽  
Short Channel ◽  
Bottom Contact

ABSTRACTWe report a reduction in the contact resistance between pentacene and Au source/drain electrodes of organic field effect transistors (OFETs) with bottom-contact structure. By immersing the Au electrodes in a sulfuric acid and hydrogen peroxide mixture (SPM), the injection barrier between the Au electrodes and pentacene was lowered by approximately 0.2 eV and the contact resistance significantly decreased. The fabricated bottom-contact OFETs revealed a field-effect mobility of more than 0.66 cm2/Vs at a channel length ranging from 3 to 30 μm, which is comparable to that of top-contact OFETs with a 50 μm channel length. The transfer characteristics of the OFET with the SPM treatment were stable even after 44days storage in air under room illumination without any passivation. Moreover, the drain current reduction due to threshold voltage (Vth) shift under continuous application of gate voltage quickly recovered toward the original value with unloading of gate voltage.

Study of top and bottom contact resistance in one organic field-effect transistor

2009 ◽  
Vol 18 (8) ◽  
pp. 3530-3534 ◽  
Author(s):  
Liu Ge ◽  
Liu Ming ◽  
Wang Hong ◽  
Shang Li-Wei ◽  
Ji Zhuo-Yu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Bottom Contact ◽  
Effect Transistor

scholarly journals Effect of contact resistance in organic field‐effect transistors

Nano Select ◽  
2021 ◽  
Author(s):  
Yanjun Shi ◽  
Jie Liu ◽  
Yuanyuan Hu ◽  
Wenping Hu ◽  
Lang Jiang
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance

2015 ◽  
Vol 7 (42) ◽  
pp. 23589-23596 ◽  
Author(s):  
Hafiz M. W. Khalil ◽  
Muhammad Farooq Khan ◽  
Jonghwa Eom ◽  
Hwayong Noh
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Doping ◽  
Effect Transistor

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

2013 ◽  
Vol 25 (15) ◽  
pp. 155303 ◽  
Author(s):  
A Di Bartolomeo ◽  
F Giubileo ◽  
L Iemmo ◽  
F Romeo ◽  
S Santandrea ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transfer Characteristics

Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors

2011 ◽  
Vol 12 (12) ◽  
pp. 2019-2024 ◽  
Author(s):  
Yong Xu ◽  
Takeo Minari ◽  
Kazuhito Tsukagoshi ◽  
Romain Gwoziecki ◽  
Romain Coppard ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Power Transfer ◽  
Organic Field Effect Transistors ◽  
Transfer Length ◽  
Resistance Evaluation
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