Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well

2013 ◽  
Vol 6 (5) ◽  
pp. 052102 ◽  
Author(s):  
Hongjian Li ◽  
Panpan Li ◽  
Junjie Kang ◽  
Zhi Li ◽  
Yiyun Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Efficiency Enhancement ◽  
Light Emitting

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

Sign in / Sign up

Export Citation Format

Share Document