Characterization of InAlN/GaN high-electron-mobility transistors grown on Si substrate using graded layer and strain-layer superlattice
2002 ◽
Vol 49
(3)
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pp. 354-360
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2006 ◽
Vol 32
(1-2)
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pp. 566-568
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2019 ◽
Vol 58
(SC)
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pp. SCCB11
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2011 ◽
Vol 326
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pp. 62-64
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2004 ◽
Vol 43
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pp. 7939-7943
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2015 ◽
1996 ◽
Vol 43
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pp. 527-534
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