Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

2004 ◽  
Vol 43 (12) ◽  
pp. 7939-7943 ◽  
Author(s):  
Makoto Miyoshi ◽  
Masahiro Sakai ◽  
Subramaniam Arulkumaran ◽  
Hiroyasu Ishikawa ◽  
Takashi Egawa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Metalorganic Vapor Phase Epitaxy ◽  
High Electron ◽  
High Electron Mobility ◽  
Al Content ◽  
Sapphire Substrates ◽  
Electron Mobility Transistors

AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine

1991 ◽  
Vol 30 (Part 2, No. 10A) ◽  
pp. L1718-L1721 ◽  
Author(s):  
Toshihide Kikkawa ◽  
Tatsuya Ohori ◽  
Eizou Mitani ◽  
Masahisa Suzuki ◽  
Hitoshi Tanaka ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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