Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

Download Full-text

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm Cmos Devices

MRS Proceedings ◽

10.1557/proc-525-313 ◽

1998 ◽

Vol 525 ◽

Cited By ~ 1

Author(s):

L. P. Ren ◽

P. Liu ◽

G. Z. Pan ◽

Jason C. S. Woo

Keyword(s):

High Temperature ◽

Low Temperature ◽

Amorphous Layer ◽

Sharp Interface ◽

Silicide Formation ◽

Si Substrate ◽

Metal Thickness ◽

Substrate Doping

ABSTRACTA novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAM silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.

Download Full-text

Si‐substrate preparation for GaAs/Si molecular‐beam epitaxy at low temperature under a Si flux

Journal of Applied Physics ◽

10.1063/1.341472 ◽

1988 ◽

Vol 64 (1) ◽

pp. 246-248 ◽

Cited By ~ 13

Author(s):

J. Castagne ◽

E. Bedel ◽

C. Fontaine ◽

A. Munoz‐Yague

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Molecular Beam ◽

Si Substrate ◽

Substrate Preparation

Download Full-text

Characterization of Gaas/Si/GaAs Heterointerfaces

MRS Proceedings ◽

10.1557/proc-148-241 ◽

1989 ◽

Vol 148 ◽

Cited By ~ 2

Author(s):

Zuzanna Liliental-Weber ◽

Raymond P. Mariella

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Low Temperature ◽

Defect Density ◽

Si Substrate ◽

Reverse Polarity ◽

Si Substrates ◽

Transmission Electron ◽

Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Download Full-text

Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature

Optical Materials ◽

10.1016/j.optmat.2008.10.007 ◽

2009 ◽

Vol 31 (9) ◽

pp. 1323-1326 ◽

Cited By ~ 3

Author(s):

Yoshikazu Terai ◽

Takehiro Tokuno ◽

Hideki Ichida ◽

Yasuo Kanematsu ◽

Yasufumi Fujiwara

Keyword(s):

Low Temperature ◽

Light Emitting Diodes ◽

Light Emitting ◽

Double Heterostructure

Download Full-text

Violet Luminescence from Ge+-Implanted SiO2 Film on Si Substrate

MRS Proceedings ◽

10.1557/proc-438-477 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 8

Author(s):

Xi-Mao Bao ◽

Ting Gao ◽

Feng Yan ◽

Song Tong

Keyword(s):

Low Temperature ◽

Thermal Annealing ◽

Quantum Confinement ◽

Quantum Confinement Effect ◽

Sio2 Film ◽

Confinement Effect ◽

Si Substrate ◽

Ultraviolet Excitation ◽

Violet Luminescence ◽

Thermally Grown

AbstractThe SiO2 films thermally grown on crystalline Si were implanted with Ge ions at 60 keV with doses of l×1015 cm-2 and l×1016 cm-2, followed by thermal annealing at various temperatures. Under an ultraviolet excitation of 240 nm, the films exhibit intense violet luminescence with a peak at 396 nm. This peak is ascribed to the T1 → S0 transition in GeO formed during implantation and annealing. After 1100°C annealing, Ge clusters were formed in an SiO2 matrix and a PL peak at 840 nm, due to the quantum confinement effect, which was measured at low temperature (77 K).

Download Full-text