Low-Phase-Noise, High Switching Speed Digitally Controlled Ring Oscillator in 0.18 µm Complementary Metal Oxide Semiconductor

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DE10
Author(s):  
Abhishek Tomar ◽  
Shashank Lingala ◽  
Ramesh Kumar Pokharel ◽  
Haruichi Kanaya ◽  
Keiji Yoshida
Keyword(s):  
Metal Oxide ◽  
Phase Noise ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Switching Speed ◽  
Digitally Controlled ◽  
High Switching Speed ◽  
Low Phase Noise

scholarly journals Design of Complementary Metal Oxide Semiconductor Based Three Stage Ring Oscillator on the Basis of Frequency, Leakage Current and Leakage Power with and Without Memristor

2019 ◽  
Vol 8 (2) ◽  
pp. 5343-5347
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Leakage Power ◽  
Ring Oscillator ◽  
Oxide Semiconductor

This paper is based on the results obtained from CMOS based three stage ring oscillator with and without using the memristor. After analyzing, the results obtained from memristor based oscillator are better in terms of frequency, leakage current and leakage power. Also a brief overview about the memristor is given, whose characteristics lies among resistance, inductance and capacitance.

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