Low-Phase-Noise, High Switching Speed Digitally Controlled Ring Oscillator in 0.18 µm Complementary Metal Oxide Semiconductor

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DE10
Author(s):  
Abhishek Tomar ◽  
Shashank Lingala ◽  
Ramesh Kumar Pokharel ◽  
Haruichi Kanaya ◽  
Keiji Yoshida
2012 ◽  
Vol 51 (2) ◽  
pp. 02BE03
Author(s):  
Sang-yeop Lee ◽  
Hiroyuki Ito ◽  
Shuhei Amakawa ◽  
Satoru Tanoi ◽  
Noboru Ishihara ◽  
...  

2019 ◽  
Vol 8 (2) ◽  
pp. 5343-5347

This paper is based on the results obtained from CMOS based three stage ring oscillator with and without using the memristor. After analyzing, the results obtained from memristor based oscillator are better in terms of frequency, leakage current and leakage power. Also a brief overview about the memristor is given, whose characteristics lies among resistance, inductance and capacitance.


2012 ◽  
Vol 51 (2S) ◽  
pp. 02BE03 ◽  
Author(s):  
Sang-yeop Lee ◽  
Hiroyuki Ito ◽  
Shuhei Amakawa ◽  
Satoru Tanoi ◽  
Noboru Ishihara ◽  
...  

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