Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Wide Tuning Range in 0.18 µm Complementary Metal Oxide Semiconductor

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DE11
Author(s):  
Yu-Sheng Tiao ◽  
Meng-Lieh Sheu ◽  
Lin-Jie Tsao
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
Tuning Range ◽  
Low Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Wide Tuning Range

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

1.2–17.6 GHz Ring-Oscillator-Based Phase-Locked Loop with Injection Locking in 65 nm Complementary Metal Oxide Semiconductor

2012 ◽  
Vol 51 (2) ◽  
pp. 02BE03
Author(s):  
Sang-yeop Lee ◽  
Hiroyuki Ito ◽  
Shuhei Amakawa ◽  
Satoru Tanoi ◽  
Noboru Ishihara ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Locked Loop ◽  
Metal Oxide Semiconductor ◽  
Injection Locking ◽  
Ring Oscillator ◽  
Oxide Semiconductor
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