Wide Band Gap and p-Type Conductive BaCuSeF Thin Films Fabricated by Pulsed Laser Deposition

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NC40 ◽  
Author(s):  
Seiji Yamazoe ◽  
Munehiro Yoshikawa ◽  
Takahiro Wada
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Wide Band Gap ◽  
P Type

Wide Band Gap and p-Type Conductive BaCuSeF Thin Films Fabricated by Pulsed Laser Deposition

2012 ◽  
Vol 51 ◽  
pp. 10NC40 ◽  
Author(s):  
Seiji Yamazoe ◽  
Munehiro Yoshikawa ◽  
Takahiro Wada
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Wide Band Gap ◽  
P Type

Wide band gap Cd0.83Mg0.15Al0.02O thin films by pulsed laser deposition

2009 ◽  
Vol 255 (8) ◽  
pp. 4466-4469 ◽  
Author(s):  
R.K. Gupta ◽  
K. Ghosh ◽  
R. Patel ◽  
P.K. Kahol
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Wide Band Gap

Size Effect in Germanium Nanostructures Fabricated by Pulsed Laser Deposition

1999 ◽  
Vol 581 ◽  
Author(s):  
K.M. Hassan ◽  
A.K. Sharma ◽  
J. Narayan ◽  
J.F. Muth ◽  
C.W. Teng ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Quantum Confinement ◽  
Three Dimensional ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Island Growth ◽  
Wide Band Gap ◽  
Average Size

ABSTRACTWe have fabricated Ge nanostructures buried in AlN and Al2O3 matrices grown on Si(111) and sapphire substrates by pulsed laser deposition. Our approach involved three-dimensional island growth of low band-gap material followed by a layer of wide band-gap material. The nanodots were uniformly distributed in between alternating layers of AlN or Al2O3. It was observed that these nanodots exhibit crystalline structure when grown at 300-500 °C. The average size of Ge islands was determined to be ∼5-15 nm, which could be varied by controlling laser deposition and substrate parameters. The Raman spectrum showed a peak of the Ge-Ge vibrational mode downward shifted upto 295 cm− which is caused by quantum confinement of phonons in the Ge-dots. The photoluminescence of the Ge dots (size ∼15nm) was blue shifted by ∼0.266 eV from the bulk Ge value of 0.73 eV at 77 K, resulting in a distinct peak at ∼1.0 eV. The spectral positions of both E1 and E2 transitions in the absorption spectra at room temperature and 77K shift toward higher energy as the Ge dot size decreases. The interpretation of these behaviors in terms of quantum confinement is discussed in this work, and the importance of pulsed laser deposition in fabricating novel nanostructures is emphasized

scholarly journals Wide-band gap semiconductors with noble metals for photonic applications

2014 ◽  
Author(s):  
Αναστάσιος Σιώζιος
Keyword(s):  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Noble Metals ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Βασικό αντικείμενο της συγκεκριμένης εργασίας είναι η ανάπτυξη και η μελέτη των δομικών και οπτικών ιδιοτήτων νανοσύνθετων υμενίων αποτελούμενων απο διαφανείς ανόργανες μήτρες με εγκλείσματα μετάλλων. Η συγκεκριμένη κατηγορία υλικών έχει προσελκύσει το ερευνητικό ενδιαφέρον εξαιτίας των εξαιρετικών οπτικών ιδιοτήτων που παρουσιάζουν οι οποίες στηρίζονται στον συντονισμό επιφανειακού πλασμονίου (SPR) ενώ η παρουσία μιας σκληρής ανόργανης μήτρας καθιστά τα υμένια αυτά ικανά να εφαρμοστούν ακόμη και στις πιο απαιτητηικες συνθηκες. Και μπορούν να βρούν άμεση εφαρμογή στην φωτονική για την χειραγωγηση του φωτός, για εξοικονόμηση και διαχείρηση ενέργειας, φωτονικούς αισθητήρες, αντιανακλαστικές επιστρώσεις, χρωματιστές επικαλύψεις κλπ. Στα πλαίσια της συγκεριμένης διδακτορικής διατριβής αναπτύχθηκαν και μελετήθηκαν ως προς τις οπτικές και δομικές τους ιδιότητες νανοσύνθετα υμένια μήτρας ΙΙΙ-νιτριδίων (AlN, AlxIn1-xN) με εγκλέισματα μετάλλων αργύρου με τις τεχνικές της Ιοντοβολής ( Sputtering) και της Εναπόθεσης με Παλμικό λέιζερ ( Pulsed Laser Deposition, PLD). Πιο συγκεκριμένα αναπτύχθηκαν δυαδικά συστήματα νιτριδίου του αλουμινίου με αργύρου σε τρεις διαφορετικές διαμορφώσεις:i)Νανοσύνθετα υμένια μήτρας νιτριδίου του αλουμινίου με μεταλλικά νανοσωματίδια μέσα στην μήτραii)Νανοσύνθετα υμένια με τον άργυρο ατομικά διεσπαρμένο εντός της μήτρα νιτριδίου του αλουμινίουiii)Πολυστρωματικά υμένια αποτελούμενα από εναλλασσόμενα λεπτά στρώματα νιτριδίου του αλουμινίου και άργυρο.Απο την ανάλυση των πειραματικών δεδομένων προέκυψε ότι είναι δυνατή η ανάπτυξη φωτοευαίσθητων patterns τα οποία μπορούν να χρησιμοποιηθούν σε μιά πλιάδα τεχνολογικών εφαρμογών όπως η χειραγώγιση του φωτός, και η κρυπτογράφιση πληροφοριών. Η δημιουργία των φωτοευαίσθητων patterns μπορεί να επιτευχθείο είτε με την αύξηση του μεγέθους των νανοσωματιδίων με ταυτόχρονη μεταβολή του δείκτη διάθλασης της μήτρας στην περίπτωση των νανοσύνθετων υμενίων που αναπτύχθηκαν με την τεχνική PLD είτε με την μετατροπή των μεταλλικών στρωμάτων σε μεταλλικά νανοσωματίδια στην μερίπτωση των πολυστρωματικών υμενίων που αναπτύχθηκαν με την τεχνική του Sputtering μετά υποβολή τους σε ανόπτηση με παλμικό laser.

Pulsed laser deposition and processing of wide band gap semiconductors and related materials

1999 ◽  
Vol 28 (3) ◽  
pp. 275-286 ◽  
Author(s):  
R. D. Vispute ◽  
S. Choopun ◽  
R. Enck ◽  
A. Patel ◽  
V. Talyansky ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Band gap modulation of ZnCdO alloy thin films with different Cd contents grown by pulsed laser deposition

2013 ◽  
Vol 547 ◽  
pp. 59-62 ◽  
Author(s):  
Jie Jiang ◽  
Liping Zhu ◽  
Yang Li ◽  
Yanmin Guo ◽  
Weishun Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Band Gap Modulation

scholarly journals Study of structural, optical and electrical properties of thin Ag2Cu2O4 films prepared by pulsed laser deposition

2019 ◽  
Vol 15 (34) ◽  
pp. 41-54
Author(s):  
Iqbal S. Naji
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sintering Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Positive Sign ◽  
Glass Substrates ◽  
Atomic Force ◽  
Structural Surface ◽  
P Type

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.

scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

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