Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CF12 ◽  
Author(s):  
Kazuo Hayashi ◽  
Yutaro Yamaguchi ◽  
Toshiyuki Oishi ◽  
Hiroshi Otsuka ◽  
Koji Yamanaka ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Reverse Bias ◽  
High Electron Mobility Transistor ◽  
Surface Barrier ◽  
High Electron ◽  
Gate Leakage Current ◽  
Mechanism Study ◽  
Transistor Structure ◽  
Aided Design ◽  
Barrier Model

scholarly journals Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 751
Author(s):  
Yu-Lin Song ◽  
Manoj Kumar Reddy ◽  
Luh-Maan Chang ◽  
Gene Sheu
Keyword(s):  
Conduction Band ◽  
Computer Aided Design ◽  
Measurement Data ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Device Structure ◽  
Gan Hemt ◽  
Fixed Charges ◽  
Vertical Electric Field ◽  
Aided Design

This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activation energies in the device structure will impact the performance of a device, the source of traps and position of traps in the device remains as a complex exercise until today. The key parameters for the precise tuning of threshold voltage (Vth) in GaN transistors are the control of the positive fixed charges −5 × 1012 cm−2, donor-like traps −3 × 1013 cm−2 at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band. Hence in this paper, the sensitivity of the trap mechanisms in GaN/AlGaN/GaN HEMT transistors, understanding the absolute vertical electric field distribution, electron density and the physical characteristics of the device has been investigated and the results are in good agreement with GaN experimental data.

scholarly journals Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 444 ◽  
Author(s):  
Shunwei Zhu ◽  
Hujun Jia ◽  
Tao Li ◽  
Yibo Tong ◽  
Yuan Liang ◽  
...  
Keyword(s):  
Energy Efficiency ◽  
Buffer Layer ◽  
Computer Aided Design ◽  
High Electron Mobility Transistor ◽  
High Energy ◽  
Design System ◽  
High Electron ◽  
Power Added Efficiency ◽  
High Energy Efficiency ◽  
Aided Design

A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. The gate of the new structure is 5 nm higher than the barrier layer, and the buffer layer has two recessed regions in the buffer layer. The TCAD simulation results show that the maximum drain saturation current and transconductance of the HGMRB HEMT decreases slightly, but the breakdown voltage increases by 16.7%, while the gate-to-source capacitance decreases by 17%. The new structure has a better gain than the conventional HEMT. In radio frequency (RF) simulation, the results show that the HGMRB HEMT has 90.8%, 89.3%, and 84.4% power-added efficiency (PAE) at 600 MHz, 1.2 GHz, and 2.4 GHz, respectively, which ensures a large output power density. Overall, the results show that the HGMRB HEMT is a better prospect for high energy efficiency than the conventional HEMT.

scholarly journals COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS

2017 ◽  
Vol 16 (2) ◽  
pp. 117
Author(s):  
Vladica Đorđević ◽  
Zlatica Marinković ◽  
Olivera Pronić-Rančić
Keyword(s):  
Comparative Analysis ◽  
Electron Mobility ◽  
Computer Aided Design ◽  
Wave Model ◽  
High Electron Mobility Transistor ◽  
Extraction Methods ◽  
Model Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Noise Modeling

The noise wave model has appeared as a very appropriate model for the purpose of transistor noise modeling at microwave frequencies. The transistor noise wave model parameters are usually extracted from the measured transistor noise parameters by using time-consuming optimization procedures in microwave circuit simulators. Therefore, three different Computer-Aided Design methods that enable more efficient automatic determination of these parameters in the case of high electron-mobility transistors were developed. All of these extraction methods are based on different noise de-embedding procedures, which are described in detail within this paper. In order to validate the presented extraction methods, they were applied for the noise modeling of a specific GaAs high electron-mobility transistor. Finally, the obtained results were used for the comparative analysis of the presented extraction approaches in terms of accuracy, complexity and effectiveness.

scholarly journals Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Shovon Pal ◽  
Hanond Nong ◽  
Sergej Markmann ◽  
Nadezhda Kukharchyk ◽  
Sascha R. Valentin ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility ◽  
Matter Interaction ◽  
Light Matter Interaction

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCD26 ◽  
Author(s):  
Mikhail Rudinsky ◽  
Eugene Yakovlev ◽  
Roman Talalaev ◽  
Tomas Novak ◽  
Petr Kostelnik ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility ◽  
Mocvd Growth

Properties of Al y Ga 1– y N/Al x Ga 1– x N/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

2009 ◽  
Vol 26 (1) ◽  
pp. 017301 ◽  
Author(s):  
Guo Lun-Chun ◽  
Wang Xiao-Liang ◽  
Xiao Hong-Ling ◽  
Ran Jun-Xue ◽  
Wang Cui-Mei ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
Double Barrier ◽  
High Electron Mobility
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