Cross-Sectional Transmission Electron Microscopy Analysis of Nanogap Electrode Fabricated by Atomic Force Microscope Local Oxidation

2013 ◽  
Vol 52 (5R) ◽  
pp. 055201 ◽  
Author(s):  
Rai Moriya ◽  
Eriko Ikenaga ◽  
Satoru Masubuchi ◽  
Tomoki Machida
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscope ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Atomic Force ◽  
Transmission Electron ◽  
Local Oxidation ◽  
Electron Microscopy Analysis ◽  
Microscopy Analysis

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

Sign in / Sign up

Export Citation Format

Share Document