Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

2020 ◽  
Vol 1004 ◽  
pp. 414-420
Author(s):  
Junro Takahashi ◽  
Kotaro Kawaguchi ◽  
Kazuhiko Kusunoki ◽  
Tomoyuki Ueyama ◽  
Kazuhito Kamei
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solution Growth ◽  
Spiral Growth ◽  
Growth Surface ◽  
Vicinal Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We have studied the microstructure of the growth surface of the 4H-SiC grown by the m-face solution growth. Atomic Force Microscopy (AFM) revealed the micro-striped morphology with the asperity of several nm in the band-like morphology region. The cross-sectional Transmission Electron Microscopy (XTEM) showed that the growth surface consisted of a bunch of nanofacets and vicinal surface. This peculiar morphology is totally different from that of conventional spiral growth on c-face, which can be closely related with the growth mechanism of the m-face solution growth.

MORPHOLOGICAL CONTROL OF GaN BUFFER LAYERS GROWN BY MOLECULAR BEAM EPITAXY ON 6H–SiC(0001)

2000 ◽  
Vol 07 (05n06) ◽  
pp. 565-570 ◽  
Author(s):  
CHANGWU HU ◽  
DAVID J. SMITH ◽  
R. B. DOAK ◽  
I. S. T. TSONG
Keyword(s):  
Electron Microscopy ◽  
Substrate Surface ◽  
Supersonic Jet ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Cross Sectional ◽  
Growth Ratio ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

The growth of GaN buffer layers of thickness 10–25 nm directly on 6H–SiC (0001) substrates was studied using low energy electron microscopy, atomic force microscopy and cross-sectional transmission electron microscopy. The Ga flux was supplied by an evaporative source, while the NH3 flux came from a seeded beam supersonic jet source. By monitoring the growth in situ and by suitably adjusting the Ga/NH 3 flux ratio, smooth basal-plane-oriented GaN layers were grown on hydrogen-etched SiC substrates at temperatures in the range of 600–700°C. The growth proceeds via nucleation of small flat islands at the step edges of the 6H–SiC (0001) substrate surface. The islands increase in size with a lateral-to-vertical growth ratio of ~10 and eventually coalesce into a quasicontinuous layer. A highly defective substrate surface was found to be detrimental to the growth of flat buffer layers.

Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers

2020 ◽  
Vol 1004 ◽  
pp. 421-426
Author(s):  
Hideki Sako ◽  
Kentaro Ohira ◽  
Kenji Kobayashi ◽  
Toshiyuki Isshiki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Faults ◽  
Wafer Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Difference

Two types of carrot defects with and without a shallow pit were found by mirror projection electron microscopy (MPJ) inspection in 4H-SiC epi wafer. Surface morphology and cross-sectional structure of prismatic stacking faults (PSFs) were investigated using MPJ and atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution scanning transmission electron microscopy (STEM). The depths of the surface grooves due to the PSFs, the stacking sequences around the PSFs and the structure of the Frank-type stacking faults which were connected to the PSFs were different. We discuss the difference between the two types of carrot defects.

Investigation of the Shape of InGaAs/GaAs Quantum Dots

2002 ◽  
Vol 737 ◽  
Author(s):  
Susan Y. Lehman ◽  
Alexana Roshko ◽  
Richard P. Mirin ◽  
John E. Bonevich
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Molecular Beam ◽  
Length Scale ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Three Samples

ABSTRACTThree samples of self-assembled In0.44Ga0.56As quantum dots (QDs) grown on (001) GaAs by molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM) and high-resolution transmission electron microscopy (TEM) in order to characterize the height, faceting, and densities of the QDs. The cross-sectional TEM images show both pyramidal dots and dots with multiple side facets. Multiple faceting has been observed only in dots more than 8.5 nm in height and allows increased dot volume without a substantial increase in base area. Addition of a GaAs capping layer is found to increase the diameter of the QDs from roughly 40 nm to as much as 200 nm. The areal QD density is found to vary up to 50 % over the central 2 cm x 2 cm section of wafer and by as much as 23 % on a length scale of micrometers.

Comparative Raman and Transmission Electron Microscopy Analysis of the Evolution of Platelet Defects in Plasma Hydrogenated and Annealed Czochralski Silicon

2002 ◽  
Vol 719 ◽  
Author(s):  
R. Job ◽  
M.-F. Beaufort ◽  
J.-F. Barbot ◽  
A. G. Ulyashin ◽  
W. R. Fahrner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Elevated Temperatures ◽  
Hydrogen Plasma ◽  
Raman Signal ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Electron Microscopy Analysis ◽  
Platelet Defects

AbstractStandard p- and n-type Czochralski (Cz) silicon wafers were hydrogenated by a RF (13.56 MHz) hydrogen plasma at moderate temperatures (250 °C). After plasma hydrogenation and subsequent annealing up to 600 °C the formation and of H2 molecules in voids and platelets was investigated by Raman spectroscopy. The Raman intensities of the H2 vibration modes at ∼ 4150 cm-1 exhibited significant intensity modulations in dependence on the annealing temperature. The intensities of the H2 Raman lines indirectly monitor the evolution of the voids and platelets upon annealing. This assumption was verified by cross-sectional transmission electron microscopy (XTEM), which was applied for comparison. The intensity modulations of the H2 Raman signal can be explained by the evolution of the well known {111} and {001} platelets. At lower annealing temperatures (< 500 °C) platelets laying in {111} planes are dominant, while at elevated temperatures (> 500 °C) [001]-oriented platelets become more and more important. In addition in p-type material by XTEM also {110} platelets could be observed.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

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