Cross-sectional transmission electron microscopy analysis of a single self-assembled quantum dot single electron transistor fabricated by atomic force microscope local oxidation

2014 ◽  
Vol 53 (4) ◽  
pp. 045202
Author(s):  
Rai Moriya ◽  
Eriko Ikenaga ◽  
Kenji Shibata ◽  
Kazuhiko Hirakawa ◽  
Satoru Masubuchi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Electron Transistor ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Atomic Force ◽  
Transmission Electron ◽  
Local Oxidation ◽  
Electron Microscopy Analysis ◽  
Microscopy Analysis

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

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