Breakdown mechanism in AlGaN/GaN high-electron mobility transistor structure on free-standing n-type GaN substrate

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FK01 ◽  
Author(s):  
Shinichi Tanabe ◽  
Noriyuki Watanabe ◽  
Hideaki Matsuzaki
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
Free Standing ◽  
High Electron Mobility ◽  
Breakdown Mechanism

scholarly journals Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Shovon Pal ◽  
Hanond Nong ◽  
Sergej Markmann ◽  
Nadezhda Kukharchyk ◽  
Sascha R. Valentin ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility ◽  
Matter Interaction ◽  
Light Matter Interaction

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCD26 ◽  
Author(s):  
Mikhail Rudinsky ◽  
Eugene Yakovlev ◽  
Roman Talalaev ◽  
Tomas Novak ◽  
Petr Kostelnik ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility ◽  
Mocvd Growth

Properties of Al y Ga 1– y N/Al x Ga 1– x N/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

2009 ◽  
Vol 26 (1) ◽  
pp. 017301 ◽  
Author(s):  
Guo Lun-Chun ◽  
Wang Xiao-Liang ◽  
Xiao Hong-Ling ◽  
Ran Jun-Xue ◽  
Wang Cui-Mei ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
Double Barrier ◽  
High Electron Mobility
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