Substrate off-angle dependency of Al content in AlxGa1−xN/GaN high-electron-mobility transistor structures on free-standing GaN substrates
Keyword(s):
2016 ◽
Vol 55
(5S)
◽
pp. 05FK01
◽
2020 ◽
Vol 814
◽
pp. 152293
◽
2017 ◽
Vol 214
(3)
◽
pp. 1600618
◽
Keyword(s):
1998 ◽
Vol 31
(2)
◽
pp. 159-164
◽
2006 ◽
Vol 45
(No. 35)
◽
pp. L932-L934
◽