Roles of chemical stoichiometry and hot electrons in realizing the stable resistive transition of sputter-deposited silicon oxide films

2017 ◽  
Vol 56 (4) ◽  
pp. 041301 ◽  
Author(s):  
Rintaro Yamaguchi ◽  
Shingo Sato ◽  
Yasuhisa Omura
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Hot Electrons ◽  
Resistive Transition ◽  
Sputter Deposited ◽  
Chemical Stoichiometry

Nanoporous structure of sputter-deposited silicon oxide films characterized by positronium annihilation spectroscopy

2002 ◽  
Vol 91 (3) ◽  
pp. 1704-1706 ◽  
Author(s):  
Y. Kobayashi ◽  
W. Zheng ◽  
T. B. Chang ◽  
K. Hirata ◽  
R. Suzuki ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Nanoporous Structure ◽  
Positronium Annihilation ◽  
Sputter Deposited

Positron annihilation study of defects and Si nanoprecipitation in sputter-deposited silicon oxide films

2003 ◽  
Vol 379 (3-4) ◽  
pp. 359-363 ◽  
Author(s):  
R.S. Yu ◽  
K. Ito ◽  
K. Hirata ◽  
K. Sato ◽  
W. Zheng ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Positron Annihilation Study ◽  
Sputter Deposited

High-Quality Gate-Oxide Films for Low-Temperature Fabricated Poly-Si TFTs

1989 ◽  
Vol 146 ◽  
Author(s):  
Shiro Suyama ◽  
Akio Okamoto ◽  
Seiiti Shirai ◽  
Tadashi Serikawa
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Drain Current ◽  
Gate Oxide ◽  
Breakdown Field ◽  
Subthreshold Slope ◽  
High Quality ◽  
Argon Mixture ◽  
Sputter Deposited

ABSTRACTHigh-quality gate-oxide films for poly-Si TFTs (Thin Film Transistors) are successfully produced by oxygen-argon sputter deposition at a low temperature (200°C). Silicon-oxide films that are sputter-deposited in an oxygen-argon mixture has higher resistivity and breakdown field than films that are sputterdeposited only in argon and thermal oxides grown on poly-Si. Moreover, TFT field-effect mobilities are considerably improved by mixing oxygen into the sputtering gas, resulting in 350 cm2 /V.sec. Subthreshold slope and threshold voltage are also reduced to 5.5 V and 0.8 V/decade. A temperature-dependence measurement of the drain current shows that these improvements in TFT characteristics result from a lowering of the barrier height at the poly-Si grain boundaries, indicating a reduction in the trap density at these boundaries. Results confirm the usefulness of gate-oxide films that are sputter-deposited in an oxygen-argon mixture, for lowtemperature fabricated poly-Si TFTs.

Hot electrons in silicon oxide

2016 ◽  
Vol 187 (09) ◽  
pp. 971-979
Author(s):  
Vladimir A. Gritsenko
Keyword(s):  
Silicon Oxide ◽  
Hot Electrons

The Composition and Properties of PECVD Silicon Oxide Films

1985 ◽  
Vol 132 (8) ◽  
pp. 2012-2019 ◽  
Author(s):  
P. Pan ◽  
L. A. Nesbit ◽  
R. W. Douse ◽  
R. T. Gleason
Keyword(s):  
Silicon Oxide ◽  
Oxide Films
Sign in / Sign up

Export Citation Format

Share Document