STEM and ELS Observation of Early Oxide Formation on the Surface of Cr Thin Films

Author(s):  
Fumio Watari ◽  
J. M. Cowley

STEM coupled with the optical system was used for the investigation of the early oxidation on the surface of Cr. Cr thin films (30 – 1000Å) were prepared by evaporation onto the polished or air-cleaved NaCl substrates at room temperature and 45°C in a vacuum of 10−6 Torr with an evaporation speed 0.3Å/sec. Rather thick specimens (200 – 1000Å) with various preferred orientations were used for the investigation of the oxidation at moderately high temperature (600 − 1100°C). Selected area diffraction patterns in these specimens are usually very much complicated by the existence of the different kinds of oxides and their multiple twinning. The determination of the epitaxial orientation relationship of the oxides formed on the Cr surface was made possible by intensive use of the optical system and microdiffraction techniques. Prior to the formation of the known rhombohedral Cr2O3, a thin spinel oxide, probably analogous to γ -Al203 or γ -Fe203, was formed. Fig. 1a shows the distinct epitaxial growth of the spinel (001) as well as the rhombohedral (125) on the well-oriented Cr(001) surface. In the case of the Cr specimen with the (001) preferred orientation (Fig. 1b), the rings explainable by spinel structure appeared as well as the well defined epitaxial spots of the spinel (001). The microdif fraction from 20A areas (Fig. 2a) clearly shows the same pattern as Fig. Ia with the weaker oxide spots among the more intense Cr spots, indicating that the thickness of the oxide is much less than that of Cr. The rhombohedral Cr2O3 was nucleated preferably at the Cr(011) sites provided by the polycrystalline nature of the present specimens with the relation Cr2O3 (001)//Cr(011), and by further oxidation it grew into full coverage of the rest of the Cr surface with the orientation determined by the initial nucleation.

Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.


1991 ◽  
Vol 239 ◽  
Author(s):  
Ramnath Venkatraman ◽  
Paul R. Besser ◽  
Sean Brennan ◽  
John C. Bravman

ABSTRACTWe have measured elastic strain distributions with depth as a function of temperature in Al thin films of various thicknesses on oxidized silicon using synchrotron grazing incidence X-ray scattering (GIXS). Disregarding minor surface relaxation effects that depend on the film thickness, it is shown that there are no gross strain gradients in these films in the range of temperatures (between room temperature and 400°C) considered. We also observe X-ray line broadening effects, suggesting an accumulation of dislocations on cooling the films, and their annealing out as the films are reheated.


2016 ◽  
Vol 1141 ◽  
pp. 51-53
Author(s):  
Chetan Zankat ◽  
V.M. Pathak ◽  
Pratik Pataniya ◽  
G.K. Solanki ◽  
K.D. Patel ◽  
...  

Amorphous SnSe thin films were deposited by thermal evaporation technique on glass substrates kept at room temperature in a vacuum better than 10-5Torr. A detailed study of structural and optical properties of 150 nm thin film was carried out. The selected area diffraction patterns obtained by TEM for this thin film were analyzed by a new method that involves accurate determination of lattice parameters by image processing software. The obtained results are in good agreement with the JCPDS data. Optical transmission spectra obtained at room temperature were analyzed to study optical properties of deposited thin films. It has been found that indirect carrier transition is responsible for optical absorption process in the deposited thin films.


2009 ◽  
Vol 65 (6) ◽  
pp. 694-698 ◽  
Author(s):  
Y. Han ◽  
I. M. Reaney ◽  
D. S. Tinberg ◽  
S. Trolier-McKinstry

SrRuO3 (SRO) thin films grown on (001)p (p = pseudocubic) oriented LaAlO3 (LAO) by pulsed laser deposition have been characterized using transmission electron microscopy. Observations along the 〈100〉p directions suggests that although the SRO layer maintains a pseudocube-to-pseudocube orientation relationship with the underlying LAO substrate, it has a ferroelastic domain structure associated with a transformation on cooling to room temperature to an orthorhombic Pbnm phase (a − a − c + Glazer tilt system). In addition, extra diffraction spots located at ±1/6(ooo)p and ±1/3(ooo)p (where `o' indicates an index with an odd number) positions were obtained in 〈110〉p zone-axis diffraction patterns. These were attributed to the existence of high-density twins on {111}p pseudocubic planes within the SrRuO3 films rather than to more conventional mechanisms for the generation of superstructure reflections.


2016 ◽  
Vol 49 (4) ◽  
pp. 1308-1314 ◽  
Author(s):  
Christophe Lefevre ◽  
Alexandre Thomasson ◽  
Francois Roulland ◽  
Vincent Favre-Nicolin ◽  
Yves Joly ◽  
...  

The cationic distribution is decisive for both the magnetic and electric properties of complex oxides. While it can be easily determined in bulk materials using classical methods such as X-ray or neutron diffraction, difficulties arise for thin films owing to the relatively small amount of material to probe. It is shown here that a full determination of the cationic site distribution in thin films is possible through an optimized processing of resonant elastic X-ray scattering experiments. The method is illustrated using gallium ferrite Ga2−xFexO3samples which have been the focus of an increasing number of studies this past decade. They indeed represent an alternative to the, to date, only room-temperature magnetoelectric compound BiFeO3. The methodology can be applied to determine the element distribution over the various crystallographic sites in any crystallized system.


1994 ◽  
Vol 9 (9) ◽  
pp. 2264-2271 ◽  
Author(s):  
H. Zhang ◽  
H.L.M. Chang ◽  
J. Guo ◽  
T.J. Zhang

Epitaxial VO2 thin films grown on (1120) sapphire (α-Al2O3) substrates by MOCVD at 600 °C have been characterized by conventional electron microscopy and high resolution electron microscopy (HREM). Three different epitaxial relationships between the monoclinic VO2 films and sapphire substrates have been found at room temperature: I. (200) [010] monoclinic VO2 ‖ (1120) [0001] sapphire, II. (002) [010] monoclinic VO2 ‖ (1120) [0003] sapphire, and III. (020) [102] monoclinic VO2 ‖ (1120) [0001] sapphire. Expitaxial relationships II and III are equivalent to each other when the film possesses tetragonal structure at the deposition temperature; i.e., they can be described as (010) [100] tetragonal VO2 ‖ (1120) [0001] sapphire and (100) [010] tetragonal VO2 ‖ (1120) [0001] sapphire. HREM image shows that the initial nucleation of the film was dominated by the first orientation relationship, but the film then grew into the grains of the second and the third (equivalent to each other at the deposition temperature) epitaxial relationships. Successive 90°transformation rotational twins around the a-axis are commonly observed in the monoclinic films.


2021 ◽  
Vol 63 (12) ◽  
pp. 2205
Author(s):  
Л.Е. Быкова ◽  
С.М. Жарков ◽  
В.Г. Мягков ◽  
Ю.Ю. Балашов ◽  
Г.С. Патрин

The study of the formation of the Cu6Sn5 intermetallic compound in Sn(55nm)/Cu(30nm) thin bilayer films was carried out directly in the column of a transmission electron microscope (electron diffraction mode) by heating the film sample from room temperature to 300 °C and recording the electron diffraction patterns. The thin films formed as a result of a solid state reaction were monophase and consisted of the η-Cu6Sn5 hexagonal phase. The temperature range for the formation of the η-Cu6Sn5 phase was determined. The estimate of the effective interdiffusion coefficient of the reaction suggests that the main mechanism for the formation of the Cu6Sn5 intermetallic is diffusion along the grain boundaries and dislocations.


2016 ◽  
Vol 49 (6) ◽  
pp. 2226-2234 ◽  
Author(s):  
Farah Haddad ◽  
Prabal Goyal ◽  
Erik V. Johnson ◽  
Junegie Hong ◽  
Pere Roca i Cabarrocas ◽  
...  

Unusual quasi-fivefold symmetric electron diffraction patterns are observed for silicon thin films grown by plasma-enhanced chemical vapour deposition and containing oxygen and carbon impurities in the range of 0.3–5.5%. These films were grown on crystalline (100) silicon wafers using a liquid precursor, hexamethyldisiloxane (HMDSO), mixed with silane, hydrogen and diborane diluted in argon. The occurrence of this quasi-fivefold symmetry is explained by multiple twinning and imperfect epitaxy. A quantitative method performed on the diffraction patterns is developed to evaluate the number of twin operations. This method is also used to discriminate twin positions from random microcrystalline ones in the diffraction patterns and thus to estimate their respective ratios for different growth conditions. Quite remarkably, the random microcrystalline part remains in the range of a few per cent and the diffracted intensities are the sum of two main contributions: multiple (micro-) twinned and amorphous. Increasing the amount of HMDSO decreases the microtwinned part directly to the benefit of the amorphous part with no significant microcrystalline phase. The causes of twinning are presented and discussed by comparing the observations with the literature; dynamical considerations where the system tends to align {111} planes with the growth direction would explain multiple twinning and, in turn, the fivefold symmetry.


Author(s):  
C.C. Chama

Substantiation of a technique earlier employed in determining stress in Copper-Silver thin films at very low temperatures is presented. It is shown that the stress measured at elevated temperatures using Stoney’s equation can be utilized in the determination of stress at very low temperatures. To demonstrate the application of this technique, a case study has been conducted by utilizing stress hysteresis curves obtained from the Cu-6at%Ag thin film heated from room temperature to 400°C and cooled back to room temperature in two cycles. The stresses in the Cu-6at%Ag thin film at various low temperatures up to-197°C have been determined by utilizing data from high temperature stress hysteresis curves.


2006 ◽  
Vol 39 (6) ◽  
pp. 919-921 ◽  
Author(s):  
Emmanuel Aubert ◽  
Emmanuel Wenger ◽  
Mathias Link ◽  
Badreddine Assouar ◽  
Claude Didierjean ◽  
...  

The experimental procedure for the determination of disorientation of thin films relative to their substrate using the dedicated single-crystal Nonius Kappa CCD diffractometer is presented in this paper. This setup is applied to the analysis of polycrystalline ZnO films deposited on silicon, where the inclination of the piezoelectric film relative to the substrate is related to excitation of the shear wave mode in these resonators. Care must be taken with harmonic contamination arising from the sealed tube. Diffraction patterns were analysed with dedicated programs written in Fortran77.


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