Ion Flux Effect in Low Temperature Silicon Epitaxy by Low-Energy Ion Bombardment

1991 ◽  
Author(s):  
Tohru YOSHIE ◽  
Masaki HIRAYAMA ◽  
Tadahiro OHMI
Keyword(s):  
Low Temperature ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Low Energy ◽  
Silicon Epitaxy

Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process

1998 ◽  
Vol 37 (Part 1, No. 6A) ◽  
pp. 3268-3271
Author(s):  
Hajime Kumami ◽  
Wataru Shindo ◽  
Kazuhide Ino ◽  
Tadahiro Ohmi
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Phosphorus Concentration ◽  
Silicon Epitaxy

Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment

RSC Advances ◽  
2014 ◽  
Vol 4 (52) ◽  
pp. 27308-27314 ◽  
Author(s):  
Shibin Krishna TC ◽  
Govind Gupta
Keyword(s):  
Low Temperature ◽  
Schottky Diodes ◽  
Ion Bombardment ◽  
Band Alignment ◽  
Low Energy ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Gan Heterostructure

InN/GaN heterostructure based Schottky diodes are fabricated by low energetic nitrogen ions at 300 °C.

Substituting low‐energy (<30 eV) ion bombardment for elevated temperature in silicon epitaxy

1988 ◽  
Vol 64 (12) ◽  
pp. 6754-6760 ◽  
Author(s):  
G. K. Wehner ◽  
R. M. Warner ◽  
P. D. Wang ◽  
Y. H. Kim
Keyword(s):  
Elevated Temperature ◽  
Ion Bombardment ◽  
Low Energy ◽  
Silicon Epitaxy
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