Evaluation of Interface SiOx Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO2-Si Diode

1998 ◽  
Author(s):  
Osamu Maida ◽  
Norio Okada ◽  
Takeshi Kanashima ◽  
Masanori Okuyama
Keyword(s):  
Transition Layer ◽  
Tunneling Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Electron Spectrum and Tunneling Current of the Toroidal and Helical Graphene Nanoribbon-Quantum Dots Contact

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Mikhail B. Belonenko ◽  
Nikolay G. Lebedev ◽  
Alexander V. Zhukov ◽  
Natalia N. Yanyushkina
Keyword(s):  
Quantum Dots ◽  
Dirac Equation ◽  
Density Of States ◽  
Electron Spectrum ◽  
Tunneling Current ◽  
Graphene Nanoribbon ◽  
Curved Space ◽  
Long Wave ◽  
Current Voltage ◽  
Current Voltage Characteristics

We study the electron spectrum and the density of states of long-wave electrons in the curved graphene nanoribbon based on the Dirac equation in a curved space-time. The current-voltage characteristics for the contact of nanoribbon-quantum dot have been revealed. We also analyze the dependence of the specimen properties on its geometry.

POSSIBLE OBSERVATION OF TUNNELING CURRENTS IN NdBaCuO SUPERCONDUCTING THIN FILMS

2003 ◽  
Vol 17 (04n06) ◽  
pp. 905-909
Author(s):  
A. NIGRO ◽  
P. ROMANO ◽  
B. SAVO
Keyword(s):  
Thin Films ◽  
Critical Temperature ◽  
Tunneling Current ◽  
Superconducting Thin Films ◽  
Quasiparticle Tunneling ◽  
Current Voltage ◽  
Oriented Films ◽  
Normal Resistance ◽  
Current Voltage Characteristics ◽  
Tunneling Behavior

Phenomena resembling a tunneling behavior have been observed on dc sputtered Nd1+xBa2-xu3Oy c-axis oriented films. The current voltage characteristics at 4.2K give evidence of quasiparticle tunneling current as usually measured in superconductor-insulator-normal metal or superconductor-insulator-superconductor junctions, with normal resistance values of about 10Ω. In the conductance curves, peak at about +/-16mV are clearly visible. An analysis of these features is presented up to temperatures close to the sample critical temperature.

scholarly journals Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains

2018 ◽  
Vol 52 (4) ◽  
pp. 472
Author(s):  
I.V. Altukhov ◽  
S.E. Dizhur ◽  
M.S. Kagan ◽  
N.A. Khvalkovskiy ◽  
S.K. Paprotskiy ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Tunneling Current ◽  
High Amplitude ◽  
Negative Resistance ◽  
Domain Formation ◽  
Resonant Cavities ◽  
Current Voltage ◽  
Short Period ◽  
Moving Domain ◽  
Current Voltage Characteristics

AbstractElectronic transport in short-period GaAs/AlAs superlattices with resonant cavities was studied at room temperature. The evolution of tunneling current at forward and backward bias sweep was investigated. The step-like decrease in current at some threshold voltage was referred to moving domain formation. The current hysteresis observed in current-voltage characteristics was explained by changes in electrical domain regimes. The series of maxima in the current-voltage characteristics was attributed to resonant tunneling of electrons through several barriers inside the domain. The change of threshold voltage for the domain formation at the change of the cavity parameters explained by the excitation of high-amplitude oscillations in the cavity which demonstrated the possibility to excite oscillations in the THz cavity by dynamical negative resistance of SLs with domains.

scholarly journals Dielectric properties of oligonucleotides on the surface of Si nanosandwich structures

2018 ◽  
Vol 52 (5) ◽  
pp. 512
Author(s):  
Maxim A. Fomin ◽  
Andrey L. Chernev ◽  
Nicolay T. Bagraev ◽  
Leonid E. Klyachkin ◽  
Anton K. Emelyanov ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Tunneling Current ◽  
Scanning Tunneling ◽  
Silicon Nanostructures ◽  
Tunneling Microscopy ◽  
Dna Oligonucleotides ◽  
Current Voltage ◽  
Heavily Doped ◽  
Capacitance Characteristics ◽  
Current Voltage Characteristics

AbstractPlanar silicon nanostructures that are formed as a very narrow silicon quantum well confined by delta-barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current- voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

NEW POSSIBILITIES FOR OBTAINING STEEPLY NONLINEAR CURRENT–VOLTAGE CHARACTERISTICS IN SOME SEMICONDUCTOR STRUCTURES

2010 ◽  
Vol 24 (19) ◽  
pp. 3723-3734
Author(s):  
D. I. SHEKA ◽  
O. V. TRETYAK ◽  
A. M. KOROL ◽  
A. K. SEN ◽  
A. MOOKERJEE
Keyword(s):  
Schottky Barrier ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Depletion Region ◽  
Semiconductor Structures ◽  
Current Voltage ◽  
Semiconductor System ◽  
Current Voltage Characteristics

Electronic processes in a semiconductor system consisting of some resonant tunneling structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant tunneling current effectively. Tunneling processes do reveal the coherent character. Sharply nonlinear current–voltage characteristics are observed for both the forward and the reverse branches.

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