C-V Characteristics of ZnO Thin-Film Field Effect Transistor Structures Formed on Glass Substrates

SnS semiconductor thin film of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition (AACV) on glass substrates and were investigated for use in a field effect transistor. Profilometry, X-ray diffraction, Scanning electron microscope and Energy dispersive X-ray spectroscopy were used to characterise the structural and microstructural properties of the SnS semiconductor. The SnS thin film was found to initially consist of a single crystal at thickness of 0.20 to 0.25μm after which it becomes polycrystalline with an orthorhombic crystal structure consisting of Sn and S elements whose composition varied with increase in thickness. The SnS film of 0.4 μm thickness shows a more uniform grain distribution and growth with a crystal size of 60.57 nm and grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density hence allowing charge carriers to move freely in the lattice thereby causing a reduction in resistivity, increase in conductivity of the films and enhanced energy band gap which are essentially parameters for a semiconductor material for application in a field effect transistor.

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Label-free attomolar detection of lactate based on radio frequency sputtered of nickel oxide thin film field effect transistor

Biosensors and Bioelectronics ◽

10.1016/j.bios.2016.09.097 ◽

2017 ◽

Vol 92 ◽

pp. 733-740 ◽

Cited By ~ 14

Author(s):

Samira Mansouri Majd ◽

Abdollah Salimi ◽

Bandar Astinchap

Keyword(s):

Thin Film ◽

Radio Frequency ◽

Nickel Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Thin Film ◽

Label Free ◽

Effect Transistor ◽

Nickel Oxide Thin Film

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Synthesis of Stannyl-Substituted Zn4O4Cubanes as Single-Source Precursors for Amorphous Tin-Doped ZnO and Zn2SnO4Nanocrystals and Their Potential for Thin Film Field Effect Transistor Applications

Chemistry of Materials ◽

10.1021/cm200282w ◽

2011 ◽

Vol 23 (9) ◽

pp. 2428-2438 ◽

Cited By ~ 34

Author(s):

Marianna Tsaroucha ◽

Yilmaz Aksu ◽

Elisabeth Irran ◽

Matthias Driess

Keyword(s):

Thin Film ◽

Field Effect ◽

Field Effect Transistor ◽

Single Source ◽

Single Source Precursors ◽

Effect Transistor ◽

Doped Zno

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Effects of buried oxide on electrical performance of thin-film silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.369763 ◽

1999 ◽

Vol 85 (7) ◽

pp. 3912-3915 ◽

Cited By ~ 7

Author(s):

Jong-Wook Lee ◽

Min-Rok Oh ◽

Yo-Hwan Koh

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Electrical Performance ◽

Buried Oxide ◽

Effect Transistor

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Fully transparent conformal organic thin-film transistor array and its application as LED front driving

Nanoscale ◽

10.1039/c7nr09134f ◽

2018 ◽

Vol 10 (8) ◽

pp. 3613-3620 ◽

Cited By ~ 11

Author(s):

Nan Cui ◽

Hang Ren ◽

Qingxin Tang ◽

Xiaoli Zhao ◽

Yanhong Tong ◽

...

Keyword(s):

Thin Film ◽

Field Effect ◽

Field Effect Transistor ◽

Thin Film Transistor ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Solution Processed ◽

Grid Electrode ◽

Metal Grid ◽

Effect Transistor

A fully transparent conformal organic thin-film field-effect transistor array is obtained based on an ultrathin embedded metal-grid electrode and a solution-processed C8-BTBT film.

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