Modeling of Metal-Induced-Lateral-Crystallization Mechanism in High Performance Low Temperature Thin-Film-Transistor Application

2002 ◽  
Author(s):  
C. F. Cheng ◽  
M. C. Poon ◽  
C. W. Kok ◽  
Mansun Chan
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
Crystallization Mechanism ◽  
Lateral Crystallization

High performance low temperature polycrystalline Si thin-film transistors fabricated by silicide seed-induced lateral crystallization

2012 ◽  
Vol 8 (3) ◽  
pp. 251-258 ◽  
Author(s):  
Chang Woo Byun ◽  
Se Wan Son ◽  
Yong Woo Lee ◽  
Seung Ki Joo
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Lateral Crystallization ◽  
Si Thin Film

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition

2016 ◽  
Vol 8 (49) ◽  
pp. 33821-33828 ◽  
Author(s):  
Jiazhen Sheng ◽  
Hwan-Jae Lee ◽  
Saeroonter Oh ◽  
Jin-Seong Park
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Layer Deposition

Device Characteristics of a Poly-Silicon Thin Film Transistor Fabricated by Milc at Low Temperature

1996 ◽  
Vol 424 ◽  
Author(s):  
Seok-Woon Lee ◽  
Byung-IL Lee ◽  
Tae-Hyung Ihn ◽  
Tae-Kyung Kim ◽  
Young-Tae Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
Thin Nickel ◽  
One Step ◽  
Lateral Crystallization ◽  
Si Films

AbstractHigh performance poly-Si thin film transistors were fabricated by using a new crystallization method, Metal-Induced Lateral Crystallization (MILC). The process temperature was kept below 500°C throughout the fabrication. After the gate definition, thin nickel films were deposited on top of the TFT's without an additional mask, and with a one-step annealing at 500°C, the activation of the dopants in source/drain/gate a-Si films was achieved simultaneously with the crystallization of the a-Si films in the channel area. Even without a post-hydrogenation passivation, mobilities of the MILC TFT's were measured to be as high as 120cm2/Vs and 90cm2/Vs for n-channel and p-channel, respectively. These values are much higher than those of the poly-Si TFT's fabricated by conventional solid-phase crystallization at around 6001C.

High-performance polysilicon air-gap thin film transistor on low-temperature substrates

2003 ◽  
Author(s):  
Hicham Mahfoz-Kotb ◽  
Anne-Claire Salaun ◽  
Tayeb Mohammed-Brahim ◽  
Nathalie Coulon ◽  
Olivier Bonnaud ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
Air Gap

High performance low temperature polysilicon thin film transistor using ECR plasma thermal oxide as gate insulator

1994 ◽  
Vol 15 (8) ◽  
pp. 301-303 ◽  
Author(s):  
Jung-Yeal Lee ◽  
Chul-Hi Han ◽  
Choong-Ki Kim
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Ecr Plasma ◽  
Thermal Oxide

High Performance p-type SnO thin-film Transistor with SiOxGate Insulator Deposited by Low-Temperature PECVD Method

2014 ◽  
Vol 14 (5) ◽  
pp. 666-672 ◽  
Author(s):  
Myeonghun U ◽  
Young-Joon Han ◽  
Sang-Hun Song ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
P Type

scholarly journals Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Manh-Cuong Nguyen ◽  
Mi Jang ◽  
Dong-Hwi Lee ◽  
Hyun-Jun Bang ◽  
Minjung Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transitions ◽  
Low Temperature ◽  
Indium Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Films ◽  
Temperature Phase ◽  
Solution Processed ◽  
Low Temperature Phase
Sign in / Sign up

Export Citation Format

Share Document