Fabrication of High Speed Single Mode 1.27 μm InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser

AbstractVertical-cavity surface-emitting lasers (VCSELs) have emerged as a vital approach for realizing energy-efficient and high-speed optical interconnects in the data centers and supercomputers. Indeed, VCSELs are the most suitable mass production lasers in terms of cost-effectiveness and reliability. However, there are still key challenges that prevent achieving modulation speeds beyond 30s GHz. Here, we propose a novel VCSEL design of a hexagonal transverse-coupled-cavity adiabatically coupled through a central cavity. Following this scheme, we show a prototype demonstrating a 3-dB roll-off modulation bandwidth of 45 GHz, which is five times greater than a conventional VCSEL fabricated on the same epiwafer structure. This design harnesses the Vernier effect to increase the laser’s aperture and therefore is capable of maintaining single-mode operation of the laser for high injection currents, hence extending the dynamic roll-off point and offering increases power output. Simultaneously, extending both the laser modulation speed and output power for this heavily deployed class of lasers opens up new opportunities and fields of use ranging from data-comm to sensing, automotive, and photonic artificial intelligence systems.

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10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation

Semiconductor Science and Technology ◽

10.1088/0268-1242/19/8/l02 ◽

2004 ◽

Vol 19 (8) ◽

pp. L86-L89 ◽

Cited By ~ 5

Author(s):

Fang-I Lai ◽

Tao-Hung Hsueh ◽

Ya-Hsien Chang ◽

Hao-Chung Kuo ◽

S C Wang ◽

...

Keyword(s):

Single Mode ◽

Cavity Surface ◽

Large Aperture ◽

Oxygen Implantation ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity

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Simulation and analysis of a Single Mode Indium Gallium Arsenide Phosphide Vertical Cavity Surface Emitting Laser for Optical Communication

Advanced Engineering Forum ◽

10.4028/www.scientific.net/aef.43.93 ◽

2021 ◽

Vol 43 ◽

pp. 93-109

Author(s):

Ogomoditse Oduetse Moatlhodi ◽

Ravi Samikannu ◽

Nonofo M.J. Ditshego

Keyword(s):

Quantum Wells ◽

Indium Gallium Arsenide ◽

Physical Models ◽

Cavity Surface ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity ◽

Electrical Bias

This present work is about simulating and analysing a Vertical Cavity Surface Emitting Laser (VCSEL) structure used in optical fibre communication systems. In this paper a VCSEL structure made of seven Quantum Wells of Indium Gallium Arsenide Phosphide (InGaAsP) emitting at 1550 nm is simulated. The device is analysed looking at the following characteristics: Direct current current and voltage (IV) characteristics, light power against electrical bias, optical gain against electrical bias, light distribution over the structure, output power and threshold current. Specification of material characteristics, ordinary physical models settings, initial VCSEL biasing, mesh declarations, declaration of laser physical models, their optical and electrical parameters were defined using Atlas syntax. Mirror ratings and quantum wells are the two main parameters that were studied and analysed to come up with structure trends. By determining important device parameters such as proper selection of the emission wavelength and choice of material; a VCSEL with an output power of 9.5 mW was simulated and compared with other structures.

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