Simulation and analysis of a Single Mode Indium Gallium Arsenide Phosphide Vertical Cavity Surface Emitting Laser for Optical Communication

2021 ◽  
Vol 43 ◽  
pp. 93-109
Author(s):  
Ogomoditse Oduetse Moatlhodi ◽  
Ravi Samikannu ◽  
Nonofo M.J. Ditshego

This present work is about simulating and analysing a Vertical Cavity Surface Emitting Laser (VCSEL) structure used in optical fibre communication systems. In this paper a VCSEL structure made of seven Quantum Wells of Indium Gallium Arsenide Phosphide (InGaAsP) emitting at 1550 nm is simulated. The device is analysed looking at the following characteristics: Direct current current and voltage (IV) characteristics, light power against electrical bias, optical gain against electrical bias, light distribution over the structure, output power and threshold current. Specification of material characteristics, ordinary physical models settings, initial VCSEL biasing, mesh declarations, declaration of laser physical models, their optical and electrical parameters were defined using Atlas syntax. Mirror ratings and quantum wells are the two main parameters that were studied and analysed to come up with structure trends. By determining important device parameters such as proper selection of the emission wavelength and choice of material; a VCSEL with an output power of 9.5 mW was simulated and compared with other structures.

2020 ◽  
Vol 8 (1) ◽  
pp. 107-111
Author(s):  
Faten A. Chaqmaqchee

This paper presents a comprehensive study of optical and electrical properties of vertical-cavity surface-emitting lasers(VCSELS) for long wavelength communication applications. The device consists of GaInNAs/GaAs multi-quantum wells QWs that enclosed between standard top and bottom epitaxially grown on AlGaAs/GaAs distributed Bragg reflectors. The impact of driven currents and injecting optical powers through QWs layers on the output light emission is addressed. Room temperature spectra measurements are performed at various applied currents using 980 nm pump laser and maximum intensity amplitude at around 21 dB was achieved.


2009 ◽  
Author(s):  
N. N. Elkin ◽  
A. P. Napartovich ◽  
D. V. Vysotsky ◽  
B. M. Lavrushin ◽  
V. I. Kozlovsky ◽  
...  

1997 ◽  
Vol 484 ◽  
Author(s):  
I. Vurgaftman ◽  
W. W. Bewley ◽  
C. L. Felix ◽  
E. H. Aifer ◽  
J. R. Meyer ◽  
...  

AbstractAn optically pumped mid-infrared vertical-cavity surface-emitting laser based on an active region with a “W” configuration of type-II antimonide quantum wells is reported. The emission wavelength of 2.9 ym has a weak temperature variation (dλ/dT ≈ 0.07 – 0.09 nm/K), and the multimode linewidth is quite narrow (2.5–4 nm). Lasing is observed up to T = 280 K in pulsed mode and up to 160 K cw. Under cw excitation at T = 78 K, the threshold pump power is as low as 4 mW for a 6 am spot, and the differential power conversion efficiency is 4.5%.


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