First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation

2007 ◽  
Author(s):  
Takuma Nanjo ◽  
Misaichi Takeuchi ◽  
Muneyoshi Suita ◽  
Yuji Abe ◽  
Toshiyuki Oishi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Resistive Source ◽  
Si Ion Implantation

Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion Implantation

2008 ◽  
Vol 1068 ◽  
Author(s):  
Kazuki Nomoto ◽  
Tomo Ohsawa ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Electron Mobility ◽  
Silicon Substrate ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Ion Implanted

ABSTRACTMultiple ion-implanted GaN/AlGaN/GaN high electron-mobility transistors (HEMTs) and preciously controlled ion-implanted resistors integrated on silicon substrate are reported. Using ion implantation into source/drain (S/D) regions, the performances were significantly improved. On-resistance reduced from 10.3 to 3.5 Ω•mm. Saturation drain current and maximum transconductance increased from 390 to 650 mA/mm and from 130 to 230 mS/mm. Measured transfer curve shows that I/O gain of 4.5 can be obtained at Vdd = 10 V.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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