Fabrication Low-voltage Amorphous Indium Zinc Oxide(a-IZO) Thin Film Transistors using High Dielectric HfO2 as Gate Insulator at Room Tempature

2009 ◽  
Author(s):  
W. K. Lin ◽  
C. S. Li ◽  
K. C. Liu ◽  
S. T. Chang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Indium Zinc Oxide ◽  
High Dielectric ◽  
Izo Thin Film

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Low-Voltage Organic Thin Film Transistors on Flexible Plastic Substrates with Anodized Ta2O5 Gate Insulators

2002 ◽  
Vol 736 ◽  
Author(s):  
Youji Inoue ◽  
Yoshihide Fujisaki ◽  
Yoshiki Iino ◽  
Hiroshi Kikuchi ◽  
Shizuo Tokito ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Light Emitting ◽  
Plastic Substrates ◽  
High Dielectric ◽  
A Current

ABSTRACTOrganic thin film transistors (OTFTs) that operate at low voltage were fabricated using a tantalum oxide (Ta2O5) gate insulator on plastic substrates. The Ta2O5 insulator was prepared by anodizing a Ta gate electrode. The high dielectric constant of the Ta2O5 enabled the OTFTs to operate at a lower voltage than those of previous devices. The OTFTs exhibited a high field-effect mobility of 0.35 - 0.51 cm2/Vs, and a current on/off ratio of 105-106 at gate voltages of less than 5 V. The threshold voltage of -1.1 V and the subthreshold slope of 0.2 V/decade were the best among those reported to date. We also demonstrated operation of a phosphorescent organic light-emitting device (OLED) with the OTFT operating at a low voltage.

Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors

2016 ◽  
Vol 81 (2) ◽  
pp. 570-575 ◽  
Author(s):  
Sun Woong Han ◽  
Jee Ho Park ◽  
Young Bum Yoo ◽  
Keun Ho Lee ◽  
Kwang Hyun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed ◽  
Indium Zinc Oxide
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