Improved Stability of ZnO Thin Film Transistor with Dual Gate Structure under Negative Bias Stress

2013 ◽  
Author(s):  
H.J. Yun ◽  
Y.S. Kim ◽  
Y.M. Kim ◽  
S.D. Yang ◽  
H.D. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Negative Bias ◽  
Zno Thin Film ◽  
Bias Stress ◽  
Gate Structure ◽  
Improved Stability ◽  
Dual Gate

Analysis of stability improvement in ZnO thin film transistor with dual-gate structure under negative bias stress

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EF11 ◽  
Author(s):  
Ho-Jin Yun ◽  
Young-Su Kim ◽  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Seung-dong Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Negative Bias ◽  
Zno Thin Film ◽  
Bias Stress ◽  
Gate Structure ◽  
Dual Gate ◽  
Analysis Of Stability

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

2017 ◽  
Vol 31 (35) ◽  
pp. 1750332
Author(s):  
Yu-Rong Liu ◽  
Jie Liu ◽  
Jia-Qi Song ◽  
Pui-To Lai ◽  
Ruo-He Yao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Practical Applications ◽  
Gate Structure ◽  
Dual Gate ◽  
Indium Gallium ◽  
Output Characteristics

An amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from [Formula: see text] to [Formula: see text] for a change of control gate voltage from −2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

Bias Stress Stability of Electric-double-layer ZnO Thin-film Transistor

2022 ◽  
Vol 43 (01) ◽  
pp. 129-136
Author(s):  
Cong WANG ◽  
◽  
Yu-rong LIU ◽  
Qiang PENG ◽  
He HUANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Bias Stress

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium

scholarly journals Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation

ETRI Journal ◽  
2012 ◽  
Vol 34 (2) ◽  
pp. 280-283 ◽  
Author(s):  
Himchan Oh ◽  
Sang-Hee Ko Park ◽  
Min Ki Ryu ◽  
Chi-Sun Hwang ◽  
Shinhyuk Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Improved Stability

Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor

2008 ◽  
Vol 53 (1) ◽  
pp. 412-415 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Hee-Hwan Choe ◽  
Kang-Woong Lee ◽  
Jae-Heon Shin ◽  
Chi-Sun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Gate Bias ◽  
Electrical Characteristics ◽  
Bias Stress ◽  
Gate Bias Stress
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