The Properties of the InxGa1-xSb Epilayer Grown on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using the Interfacial Misfit Dislocation Technique

Mapping Intimacies ◽

10.7567/ssdm.2016.ps-8-09 ◽

2016 ◽

Author(s):

S. Huynh ◽

Q. Luc ◽

M. Ha ◽

H. Do ◽

H. Yu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Misfit Dislocation ◽

Vapor Deposition ◽

Gaas Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Metalorganic Chemical ◽

Dislocation Technique

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The Growth of InxGa1-xSb Epilayer on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using an Interfacial Misfit Dislocation GaSb Buffer Layer

10.7567/ssdm.2016.ps-8-10 ◽

2016 ◽

Author(s):

S. Huynh ◽

M. Ha ◽

Q. Luc ◽

H. Do ◽

C. Hsiao ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Buffer Layer ◽

Misfit Dislocation ◽

Vapor Deposition ◽

Gaas Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Metalorganic Chemical

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Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4962640 ◽

2016 ◽

Vol 109 (10) ◽

pp. 102107 ◽

Author(s):

Sa Hoang Huynh ◽

Minh Thien Huu Ha ◽

Huy Binh Do ◽

Quang Ho Luc ◽

Hung Wei Yu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Misfit Dislocation ◽

Vapor Deposition ◽

Gaas Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Growth Mode ◽

Metalorganic Chemical

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High-Quality 1 eV In0.3Ga0.7As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application

Applied Physics Express ◽

10.1143/apex.4.075501 ◽

2011 ◽

Vol 4 (7) ◽

pp. 075501 ◽

Author(s):

Hong Quan Nguyen ◽

Edward Yi Chang ◽

Hung Wei Yu ◽

Kung Liang Lin ◽

Chen Chen Chung

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gaas Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Quality ◽

Solar Cell Application ◽

Metalorganic Chemical

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Heteroepitaxy of In0.53Ga0.47As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications

Microelectronics Journal ◽

10.1016/j.mejo.2005.12.008 ◽

2006 ◽

Vol 37 (8) ◽

pp. 700-704 ◽

Author(s):

Aiguang Ren ◽

Xiaomin Ren ◽

Qi Wang ◽

Deping Xiong ◽

Hui Huang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gaas Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Metalorganic Chemical

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Epitaxial growth of ZnMgTe and double heterostructure of on GaAs substrate by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(95)00244-8 ◽

1995 ◽

Vol 156 (4) ◽

pp. 373-376 ◽

Author(s):

Takeharu Asano ◽

Kenji Funato ◽

Fumihiko Nakamura ◽

Akira Ishibashi

Keyword(s):

Chemical Vapor Deposition ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Gaas Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical

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Misfit dislocation generated in InAs epilayer and InP substrate interfaces grown by metalorganic chemical-vapor deposition

Materials Letters ◽

10.1016/s0167-577x(01)00524-9 ◽

2002 ◽

Vol 53 (6) ◽

pp. 446-451 ◽

Author(s):

Jwayeon Kim ◽

Euijung Yun ◽

Jaekeun Yu ◽

Kyeongsoon Park ◽

Sanghoon Chai ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Misfit Dislocation ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Inp Substrate ◽

Metalorganic Chemical

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Epitaxial growth of ZnMgSSe on GaAs substrate by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91103-7 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 537-540 ◽

Author(s):

A. Toda ◽

T. Asano ◽

K. Funato ◽

F. Nakamura ◽

Y. Mori

Keyword(s):

Chemical Vapor Deposition ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Gaas Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Metalorganic Chemical

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Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition

Materials Research Express ◽

10.1088/2053-1591/aa8043 ◽

2017 ◽

Vol 4 (8) ◽

pp. 085901 ◽

Author(s):

Minh Thien Huu Ha ◽

Sa Hoang Huynh ◽

Huy Binh Do ◽

Tuan Anh Nguyen ◽

Quang Ho Luc ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Buffer Layer ◽

Misfit Dislocation ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Domain Boundary ◽

Chemical Vapor ◽

Antiphase Domain ◽

Gaas Buffer Layer ◽

Metalorganic Chemical

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Properties of the quantum wires grown on V‐grooved Al0.3Ga0.7As/GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.110255 ◽

1993 ◽

Vol 63 (22) ◽

pp. 3052-3054 ◽

Author(s):

Min‐Suk Lee ◽

Yong Kim ◽

Moo‐Song Kim ◽

Seong‐II Kim ◽

Suk‐Ki Min ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Gaas Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Quantum Wires ◽

Chemical Vapor ◽

Metalorganic Chemical

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The Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition.

Materials Science Forum ◽

10.4028/www.scientific.net/msf.258-263.1643 ◽

1997 ◽

Vol 258-263 ◽

pp. 1643-1652 ◽

Author(s):

S. Kim ◽

M. Erdtmann ◽

M. Razeghi

Keyword(s):

Quantum Dots ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gaas Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

The Self ◽

Long Wavelength ◽

Self Organized ◽

Metalorganic Chemical

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