Investigating on Structural, Optical, Magnetic and Photocatalytic Activities of ZnS and Co2+: ZnS NPs Synthesized by Hydrothermal Process Under MeB Dye

In present work, the structural, morphological, optical and photocatalytic activities of ZnS and Co2+: ZnS NPs were prepared through chemical route as hydrothermal process at room temperature. ZnS and Co2+: ZnS were characterized by using various techniques such as, XRD, SEM-EDX, TEM-SAED, UV-visible, PL and BET. The spherical-like morphology with the average crystallite size was found to be 8 to 15 nm. Among them results, it showed that the Co2+ atoms were incorporated into the ZnS lattice, forming cubic phase as the Co2+ dopant concentration increases from 0 to 2 %. The band gap energy of the ZnS and Co2+: ZnS increases from 3.5 to 4.10 eV, which enables stronger absorption of UV region. During catalytic process, Co2+ act as electron trapping center, which inhibits the recombination of the photo induced holes and electrons as showed higher degradation efficiency for MeB.

Prolonged electron lifetime in sulfur vacancy-rich ZnCdS nanocages by interstitial phosphorus doping for photocatalytic water reduction

Sulfur vacancy-rich ZnCdS nanocages with interstitial P dopant atoms were fabricated. The promoted Fermi level caused by interstitial P doping facilitates the S vacancy level to be an effective electron trapping center, thus enhancing the photocatalytic performance.

Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC

In this paper, the electrical properties of pre- and post-rapid thermal annealed 4H SiC-based gate oxide grown in 10% nitrous oxide (N2O) and in dry oxygen have been investigated, compared, and reported for the first time. After treating the nitrided gate oxide in rapid thermal annealing (RTA), oxide breakdown characteristic has been improved significantly. This improvement has been attributed to the reduction of SiC–SiO2 interface-trap density and the generation of positive oxide charge, acting as an electron-trapping center. However, deleterious effects have been observed in non-nitrided oxide after subjected to the same RTA treatment. The differences in oxide-breakdown strength of these oxides have been explained and modeled.

Electronic Characterization of Dislocations in Rtcvd Germanium-Silicon/Silicon Grown by Graded Layer Epitaxy

Carrier trapping and recombination activity have been studied with DLTS and EBIC in RTCVD grown compositionally graded Ge0.3Si0.7/Si heterostructures. DLTS peak height is found to vary with applied bias, and the bias conditions used indicate that at least one peak is present in the homoepitaxial Si buffer layer and perhaps the substrate as well. Variations in EBIC contrast as a function of reverse bias, and DLTS fill pulse experiments both indicate that the DLTS peaks observed are dislocation related. Moreover, the bias dependent decrease in DLTS peak height is observed to occur at different rates for different peaks, indicating a possible connection between certain DLTS peaks and dislocation orientation or type. Activation energies of one electron trapping center and one hole trapping center add up to roughly the expected bandgap in a relaxed GexSi1−x, alloy with x ≦ 0.3, indicating that the electron and hole trapping centers observed with DLTS may, in fact, be associated with the R-G center observed by EBIC.