Prolonged electron lifetime in sulfur vacancy-rich ZnCdS nanocages by interstitial phosphorus doping for photocatalytic water reduction
Keyword(s):
Sulfur vacancy-rich ZnCdS nanocages with interstitial P dopant atoms were fabricated. The promoted Fermi level caused by interstitial P doping facilitates the S vacancy level to be an effective electron trapping center, thus enhancing the photocatalytic performance.
2018 ◽
Vol 18
(4)
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pp. 2856-2874
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2017 ◽
Vol 7
(6)
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pp. 2993
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2019 ◽
Vol 123
(30)
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pp. 18160-18170
2015 ◽
Vol 15
(9)
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pp. 6460-6471
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