The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors

Amorphous oxide semiconductors are promising for their use in thin-film transistor (TFT) devices due to their high carrier mobility and large-area uniformity. However, their commercialization is limited by the negative gate bias stress experienced under continuous light illumination. Here, we report an approach to improve the negative bias illumination stress (NBIS) stability of amorphous oxide semiconductors TFTs by using lanthanide-doped indium oxide semiconductors as the channel layer. The effect of different lanthanide dopants on performances of solution-processed Ln:In2O3 TFTs are investigated. All lanthanides exhibit strong suppression of oxygen vacancy, which shift the Von from −13.5 V of pure In2O3 TFT to −1~1 V of Ln:In2O3 TFTs (except Ce). However, only Pr:In2O3 and Tb:In2O3 TFTs exhibit much better NBIS stability with same ΔVon of −3.0 V, compared to much higher ΔVon of −7.9~−15.6 V for other Ln:In2O3 TFTs. Our comprehensive study reveals that praseodymium and terbium act as a blue light down-conversion medium with low charge transfer transition energy for lowing photosensitivity of oxide semiconductors.

Study on the photoelectrical performance of anodized titanium sheets

Anodization is a widely used method to obtain multicoloured oxidized titanium sheets. However, most researchers paid great attention to the colour-related properties instead of photoelectrical properties of titanium oxide film obtained by anodization. In this work, to study their photoelectrical properties, a series of multicoloured oxidized titanium sheets were prepared by anodization method, and UV–vis absorption and photocurrents were tested. The relationship between anodization voltages/anodization durations and photocurrents of titanium sheets was studied. Results show that titanium sheets have excellent photoelectrical performance. With the increase of anodization voltage, the number of UV–vis absorption peaks increased under visible light which means increasing absorption. When anodization duration increased, absorption band edge also increased in the visible light region, which means the band gap needed to produce charge transfer transition decreased. Under simulated sunlight and applied voltage of +0.4 V, photocurrent increased with the increase of either anodization voltage or anodization duration, and can be expressed by linear equations. In addition, anodization currents were recorded during anodization. Morphology, crystal structure and photoelectrical properties of anodized titanium sheets were characterized. The anodized titanium sheets can not only be used as decorative material in jewellery and architecture fields etc. but also are supposed to be used as photoelectrical catalyst in further work.

Novel turn-on fluorescent sensor for cyanide ion based on the charge transfer transition of phenothiazine/indolium compounds

A new fluorescent sensor combining phenothiazine and indolium, which reacts specifically with the cyanide ion with a large Stokes shift and a good fluorescence quantum yield, was prepared. When CN-.

Charge-transfer transition regulation of thermally activated delayed fluorescence emitters by changing the valence of sulfur atoms

Changing the valence of a sulfur atom to form two novel thermally activated delayed fluorescence emitters with different charge transfer transitions.