Magnetoresistance of epitaxial SrRuO3 thin films on a flexible CoFe2O4-buffered mica substrate

2021 ◽  
Author(s):  
Yeong Min Kwak ◽  
Kwang Lim Oh ◽  
Young Joon Ko ◽  
Sang Hyeok Park ◽  
Sangkyun Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Mica Substrate

scholarly journals Equilibrium and Nonequilibrium Nanoscale Ordering of Polystyrene-b-poly(N,N′-diethylaminoethyl methacrylate), a Block Copolymer Carrying Tertiary Amine Functional Groups

2014 ◽  
Vol 2014 ◽  
pp. 1-14 ◽  
Author(s):  
Pedro Navarro-Vega ◽  
Arturo Zizumbo-López ◽  
Angel Licea-Claverie ◽  
Alejandro Vega-Rios ◽  
Francisco Paraguay-Delgado
Keyword(s):  
Thin Films ◽  
Gold Nanoparticles ◽  
Free Radical ◽  
Block Copolymer ◽  
Radical Polymerization ◽  
Tertiary Amine ◽  
Chain Transfer ◽  
Uv Light ◽  
Mica Substrate ◽  
The Core

Poly(styrene)-b-poly(N,N′-diethylaminoethyl methacrylate) (PS-b-PDEAEM) block copolymer was synthesized by RAFT free-radical polymerization using a trithiocarbonate type of chain transfer agent (CTA). Several block copolymer compositions were achieved maintaining low polydispersities by using PS as macro-CTA in the first step. Thin films of PS60%-b-PDEAEM40%were deposited over mica substrate, and its equilibrium and nonequilibrium nanostructures were studied. Lamellar (equilibrium), bicontinuous (nonequilibrium) and detached nanoflakes (nonequilibrium), were obtained by using different annealing methods. Mixing nanocomposites of gold nanoparticles/PDEAEM in the block copolymer resulted in the formation of toroidal nanostructures confining gold nanoparticles to the core of those nanostructures. The same toroidal nanostructure was achieved by different annealing methods, including irradiation with UV light for 15 min. Electron micrographs show clearly this different type of arrays.

scholarly journals Surface Layers and Thermoelectric Properties of Vapor-Phase Condensation LAST Pb18Ag2-xSbxTe20 on Mica

2015 ◽  
Vol 16 (1) ◽  
pp. 93-97
Author(s):  
D. M. Freik ◽  
B. S. Dzundza ◽  
O. B. Kostyuk ◽  
V. I. Makovyshyn ◽  
R. S. Yavorskiy
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Vapor Phase ◽  
High Vacuum ◽  
Layer Model ◽  
Electrical Parameters ◽  
Surface Layers ◽  
Mica Substrate ◽  
Two Layer Model

The thermoelectric properties of thin films Pb18Ag2-xSbxTe20, obtained by condensation of vapor on the high vacuum on mica substrate are researched. Based on a two-layer model Petrits are founded electrical parameters of surface layers. It is shown that condensates thickness d <1 micron are characterized by improved thermoelectric properties.

scholarly journals Magnetotransport study of (Sb1−xBix)2Te3 thin films on mica substrate for ideal topological insulator

AIP Advances ◽  
2016 ◽  
Vol 6 (5) ◽  
pp. 055812 ◽  
Author(s):  
Yan Ni ◽  
Zhen Zhang ◽  
Cajetan I. Nlebedim ◽  
David C. Jiles
Keyword(s):  
Thin Films ◽  
Topological Insulator ◽  
Mica Substrate

scholarly journals FEM Simulation of THz Detector Based on Sb and Bi88Sb12 Thermoelectric Thin Films

2020 ◽  
Vol 10 (6) ◽  
pp. 1929
Author(s):  
Anastasiia S. Tukmakova ◽  
Alexei V. Asach ◽  
Anna V. Novotelnova ◽  
Ivan L. Tkhorzhevskiy ◽  
Natallya S. Kablukova ◽  
...  
Keyword(s):  
Thin Films ◽  
Radiation Power ◽  
Radiation Detection ◽  
Fem Simulation ◽  
Thz Radiation ◽  
Frequency Range ◽  
Mica Substrate ◽  
Substrate Properties ◽  
Thz Detector ◽  
Thermoelectric Thin Films

A terahertz (THz) detector based on thermoelectric thin films was simulated using the finite elements method. The thermoelectric circuit consisted of S b and B i 88 S b 12 150-nm films on the mica substrate. S b , B i 88 S b 12 , and mica-substrate properties have been measured experimentally in the THz frequency range. The model of electromagnetic heating was used in order to estimate possible heating of S b - B i 88 S b 12 contact. THz radiation power varied from 1 μ W to 50 mW, and frequency varied in the range from 0.3 to 0.5 THz. The calculations showed a temperature difference of up to 1 K, voltage up to 0.1 mV, and responsivity of several mVW − 1 . The results show that thin S b and B i − S b thermoelectric films can be used for THz radiation detection at room temperatures.

scholarly journals Formation and physical properties of the self-assembled BFO–CFO vertically aligned nanocomposite on a CFO-buffered two-dimensional flexible mica substrate

RSC Advances ◽  
2021 ◽  
Vol 11 (26) ◽  
pp. 15539-15545
Author(s):  
Tahta Amrillah ◽  
Angga Hermawan ◽  
Shu Yin ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Physical Properties ◽  
The Self ◽  
Two Dimensional ◽  
Mica Substrate ◽  
Vertically Aligned ◽  
Self Assembled

BiFeO3–CoFe2O4 vertically aligned nanocomposites, which mainly discovered in thin-films deposited on rigid substrates, have been successfully transformed into a flexible thin-film using a mica substrate.

High Quality Textured C60 Thin Films on a Mica Substrate: Growth, Crystalline Structure, Electrical and Photoelectric Properties

2001 ◽  
Vol 80-81 ◽  
pp. 15-20 ◽  
Author(s):  
E.A. Katz ◽  
D. Faiman ◽  
S. Shtutina ◽  
A. Isakina ◽  
K. Yagotintsev ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Structure ◽  
Mica Substrate ◽  
High Quality ◽  
Photoelectric Properties

scholarly journals The Thickness Dependence of Thermoelectric Parameters of thin Films Based on Compounds LAST

2016 ◽  
Vol 17 (3) ◽  
pp. 368-371 ◽  
Author(s):  
B.S. Dzundza ◽  
O.B. Kostyuk ◽  
V.I. Makovyshyn
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
High Vacuum ◽  
Thickness Dependence ◽  
Layer Model ◽  
Electrical Parameters ◽  
Surface Layers ◽  
Mica Substrate ◽  
Two Layer Model ◽  
Thermoelectric Parameters

The thermoelectric properties of thin films based on compounds PbSnAgTe, obtained by condensation of vapor on the high vacuum on mica substrate are researched. Based on a two-layer model Petrits are founded electrical parameters of surface layers. It is shown that condensates thickness d < 500 nm are characterized by improved thermoelectric properties.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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