Towards high performance near-infrared photo detectors based on SnS nanowires

2021 ◽  
Author(s):  
Changfeng Gu ◽  
Yecheng Cheng ◽  
Qinyong Dai ◽  
Dongqi Liu ◽  
Wenli Lv ◽  
...  
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Volume Ratio ◽  
Chemical Vapor ◽  
Mica Substrate ◽  
Electrical And Optical Properties ◽  
Promising Candidate ◽  
Photo Detectors ◽  
Weak Light ◽  
Bulk Structures

Abstract Compared with bulk structures, semiconductor nanowires exhibit a higher surface-to-volume ratio, as well as unique electrical and optical properties. Due to its narrow band gap, tin (ii) sulfide (SnS) nano wire is a promising candidate for constructing near-infrared (NIR) photodetectors. Uniformly distributed and well aligned SnS nanowires were grown on mica substrate by chemical vapor deposition, and NIR photodetectors with Au (Au-device) and Al (Al-device) as the electrode were fabricated and characterized. Compared to Au-device, Al-device achieved higher photodetectivity due to reduced dark current. More importantly by incorporating photosensitive lead phthalocyanine (PbPc) film into Al-device, both responsivity and detectivity could be apparently improved, especially at weak light intensities. Under a weak light intensity of 0.79 mW/cm2 the photoresponsivity and specific detectivity were improved from ~0.56 A/W and 5.1×1010 Jones to 0.96 A/W and 8.4×1010 Jones, respectively.

scholarly journals III–V Nanowires: Synthesis, Property Manipulations, and Device Applications

2014 ◽  
Vol 2014 ◽  
pp. 1-14 ◽  
Author(s):  
Ming Fang ◽  
Ning Han ◽  
Fengyun Wang ◽  
Zai-xing Yang ◽  
SenPo Yip ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Volume Ratio ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Research Field ◽  
Synthesis Methods ◽  
Comprehensive Overview ◽  
Device Applications ◽  
Property Control

III–V semiconductor nanowire (NW) materials possess a combination of fascinating properties, including their tunable direct bandgap, high carrier mobility, excellent mechanical flexibility, and extraordinarily large surface-to-volume ratio, making them superior candidates for next generation electronics, photonics, and sensors, even possibly on flexible substrates. Understanding the synthesis, property manipulation, and device integration of these III–V NW materials is therefore crucial for their practical implementations. In this review, we present a comprehensive overview of the recent development in III–V NWs with the focus on their cost-effective synthesis, corresponding property control, and the relevant low-operating-power device applications. We will first introduce the synthesis methods and growth mechanisms of III–V NWs, emphasizing the low-cost solid-source chemical vapor deposition (SSCVD) technique, and then discuss the physical properties of III–V NWs with special attention on their dependences on several typical factors including the choice of catalysts, NW diameters, surface roughness, and surface decorations. After that, we present several different examples in the area of high-performance photovoltaics and low-power electronic circuit prototypes to further demonstrate the potential applications of these NW materials. Towards the end, we also make some remarks on the progress made and challenges remaining in the III–V NW research field.

scholarly journals High-performance monolayer MoS2 photodetector enabled by oxide stress liner using scalable chemical vapor growth method

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1981-1991 ◽  
Author(s):  
Zhiwen Li ◽  
Jing Wu ◽  
Cong Wang ◽  
Han Zhang ◽  
Wenjie Yu ◽  
...  
Keyword(s):  
High Performance ◽  
Large Scale ◽  
Surface Defects ◽  
Volume Ratio ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Light Illumination ◽  
Vapor Growth ◽  
Layer Deposition ◽  
Growth Method

AbstractMoS2, as a typical representative of two-dimensional semiconductors, has been explored extensively in applications of optoelectronic devices because of its adjustable bandgap. However, to date, the performance of the fabricated photodetectors has been very sensitive to the surrounding environment owing to the large surface-to-volume ratio. In this work, we report on large-scale, high-performance monolayer MoS2 photodetectors covered with a 3-nm Al2O3 layer grown by atomic layer deposition. In comparison with the device without the Al2O3 stress liner, both the photocurrent and responsivity are improved by over 10 times under 460-nm light illumination, which is due to the tensile strain induced by the Al2O3 layer. Further characterization demonstrated state-of-the-art performance of the device with a responsivity of 16.103 A W−1, gain of 191.80, NEP of 7.96 × 10−15 W Hz−1/2, and detectivity of 2.73 × 1010 Jones. Meanwhile, the response rise time of the photodetector also reduced greatly because of the increased electron mobility and reduced surface defects due to the Al2O3 stress liner. Our results demonstrate the potential application of large-scale strained monolayer MoS2 photodetectors in next-generation imaging systems.

High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 7239-7245 ◽  
Author(s):  
Dingshan Zheng ◽  
Hehai Fang ◽  
Mingsheng Long ◽  
Feng Wu ◽  
Peng Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Near Infrared ◽  
Chemical Vapor ◽  
Infrared Photodetectors ◽  
P Type

scholarly journals Growth of a Large, Single-Crystalline WS2 Monolayer for High-Performance Photodetectors by Chemical Vapor Deposition

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 137
Author(s):  
Ying Chen
Keyword(s):  
High Performance ◽  
Chemical Vapor ◽  
Fast Response ◽  
Tungstic Acid ◽  
Large Area ◽  
High Quality ◽  
Promising Candidate ◽  
Cvd Method ◽  
Ws2 Nanosheets ◽  
Ws2 Monolayer

2D WS2 is a promising candidate for the next generation nanoelectronics, spintronics, valleytronics, and optoelectronics. However, the uncontrollably large-area growth of WS2 nanosheets and their unsatisfactory performance of the photodetectors based on WS2 hindered its applications. Here, we proposed a CVD method using tungstic acid as the precursors to grow WS2 flakes. After being characterized by AFM, Raman, PL, and TEM, we found the as-grown WS2 flakes were high-quality structures. Then the photodetectors based on the as-grown WS2 were fabricated, which exhibited high responsivity (7.3 A W−1), a fast response rate (a response time of 5 ms and a recovery time of 7 ms), prefect external quantum efficiency (EQE) (1814%), and remarkable detectivity (D*) (3.4 × 1012 Jones). Our works provided a new CVD method to grow some high-quality WS2 nanosheets.

Pharmacokinetics and Tissue Distribution Study of Ferruginol in Wistar Rat by High-performance Liquid Chromatography

2018 ◽  
Vol 15 (1) ◽  
pp. 67-73 ◽  
Author(s):  
Guiyun Cao ◽  
Suqiao Han ◽  
Keke Li ◽  
Li Shen ◽  
Xiaohong Wang ◽  
...  
Keyword(s):  
Tissue Distribution ◽  
Mobile Phase ◽  
High Performance ◽  
Wistar Rat ◽  
Freezing And Thawing ◽  
Promising Candidate ◽  
Distribution Study ◽  
Substance Loss ◽  
Tissue Distribution Study ◽  
The Brain

Background: Ferruginol (FRGN) exhibits a broad range of pharmacological properties which make it a promising candidate for chemoprevention. However, little is known about its absorption, distribution, metabolism, excretion, and toxicity (ADMET) properties. Methods: A rapid, sensitive and specific HPLC-DAD method was established to quantify FRGN in the plasma and tissues of Wistar rats. After extraction of FRGN with ethyl acetate (EtOAc), chromatographic separation was performed on a YMC ODS C18 column (250 × 4.6 mm I.D., 5 µm) with a mobile phase consisting of methanol-water (92:8, v/v) at a flow rate of 0.9 mL/min. Detection was conducted with a wavelength of 273 nm at 25 °C. Results: The calibration curves for FRGN were linear in the concentration range of 0.5-20 µg/mL for plasma, 0.5-10 µg/mL for heart, liver, spleen, lung, kidney, stomach, intestine, brain and muscle. After three cycles of freezing and thawing, the concentration variations were within ± 7% of nominal concentrations, indicating no significant substance loss during repeated thawing and freezing. The assay was applied to pharmacokinetic and tissue distribution study in rats. Results suggested that lung, heart, liver, spleen and kidney were the major distribution tissues of FRGN in rats, and FRGN could permeate the blood-brain barrier to distribute in the brain of rats. Conclusion: The information provided by this research is very useful for gaining knowledge of the pharmacokinetic process and tissue distribution of FRGN.

Ultra-smooth and robust graphene-based hybrid anode for high-performance flexible organic light-emitting diodes

2021 ◽  
Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Large Particles

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...

scholarly journals The Effect of Nitrogen Incorporation on the Optical Properties of Si-Rich a-SiCx Films Deposited by VHF PECVD

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 637
Author(s):  
Hongliang Li ◽  
Zewen Lin ◽  
Yanqing Guo ◽  
Jie Song ◽  
Rui Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Near Infrared ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Nonradiative Recombination ◽  
Very High Frequency ◽  
N Content ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
N Incorporation

The influence of N incorporation on the optical properties of Si-rich a-SiCx films deposited by very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD) was investigated. The increase in N content in the films was found to cause a remarkable enhancement in photoluminescence (PL). Relative to the sample without N incorporation, the sample incorporated with 33% N showed a 22-fold improvement in PL. As the N content increased, the PL band gradually blueshifted from the near-infrared to the blue region, and the optical bandgap increased from 2.3 eV to 5.0 eV. The enhancement of PL was suggested mainly from the effective passivation of N to the nonradiative recombination centers in the samples. Given the strong PL and wide bandgap of the N incorporated samples, they were used to further design an anti-counterfeiting label.

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